Power Transistor KIA Semicon Tech KNB3306B 80A 60V N Channel MOSFET for DC DC Converter Applications
Key Attributes
Model Number:
KNB3306B
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
80A
Operating Temperature -:
-
RDS(on):
8mΩ@10V,40A
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
195pF
Number:
1 N-channel
Input Capacitance(Ciss):
3.08nF
Output Capacitance(Coss):
400pF
Pd - Power Dissipation:
156W
Gate Charge(Qg):
104nC@10V
Mfr. Part #:
KNB3306B
Package:
TO-263
Product Description
Product Overview
The KIA SEMICONDUCTORS 3306B is an 80A 60V N-CHANNEL MOSFET designed for high-efficiency power applications. It features a low Rds(on) of 7mtyp@VGS=10V to minimize conductive loss and a high avalanche current capability. This device is suitable for power supplies and DC-DC converters.
Product Attributes
- Brand: KIA
- Device Type: N-CHANNEL MOSFET
- Part Number: 3306B
- Lead Free and Green Device Available
Technical Specifications
| Parameter | Symbol | Conditions | TO-252 | TO-263 | Units | Notes |
| Continuous Drain Current | ID | TC=25 C | 80* | 80 | A | *Drain current limited by maximum junction temperature. Package limitation current is 55A. |
| TC=100 C | 60* | 60 | A | *Drain current limited by maximum junction temperature. Package limitation current is 55A. | ||
| Calculated continuous current based on maximum allowable junction temperature. | - | - | A | - | ||
| Pulsed Drain Current | IDP | TC=25 C | 280 | - | A | Repetitive rating, pulse width limited by max junction temperature. |
| Avalanche Current | IAS | Starting TJ=25 C,L=0.5mH, IAS=40A. | 20 | - | A | - |
| Avalanche Energy | EAS | Starting TJ=25 C,L=0.5mH, IAS=40A. | 400 | - | mJ | - |
| Maximum Power Dissipation | PD | TC=25 C | 84.5 | 156 | W | - |
| TC =100 C | 41 | 80 | W | - | ||
| Drain-source breakdown voltage | V(BR)DSS | VGS=0V,ID=250A | 60 | - | V | - |
| Zero gate voltage drain current | IDSS | VDS=48V,VGS=0V | 1 | 1 | A | TJ=125 C |
| Gate-body leakage current | IGSS | VGS=+25V,VDS=0V | - | - | +100 nA | - |
| Gate threshold voltage | VGS(th) | VDS=VGS, ID=250A | 2 | 3 | 4 V | - |
| Drain-source on resistance | RDS(on) | VGS=10V,ID=40ATO-263) | - | 7 | 8.0 m | - |
| VGS=10V,ID=40ATO-252) | 7.5 | 8.5 | m | - | ||
| Diode Forward Voltage | VSD1 | VGS=0V,ISD=20A | - | - | 0.85 1.3 V | - |
| Diode Continuous Forwardcurrent | IS3 | - | 80 | 80 | A | Calculated continuous current based on maximum allowable junction temperature. |
| Reverse recovery time | trr | IF=30A, di/dt=100A/s | - | - | 33 ns | - |
| Reverse recovery charge | Qrr | IF=30A, di/dt=100A/s | - | - | 61 nC | - |
| Input capacitance | Ciss | VDS=25V,VGS=0V,f=1MHz | - | - | 3080 pF | - |
| Output capacitance | Coss | VDS=25V,VGS=0V,f=1MHz | - | - | 400 pF | - |
| Reverse transfer capacitance | Crss | VDS=25V,VGS=0V,f=1MHz | - | - | 195 pF | - |
| Dynamic Characteristics | td(on) | VDD=30V,ID=30A, RG=6.8,VGS=10V | - | - | 14 ns | - |
| tr | VDD=30V,ID=30A, RG=6.8,VGS=10V | - | - | 13 ns | - | |
| td(off) | VDD=30V,ID=30A, RG=6.8,VGS=10V | - | - | 20 ns | - | |
| tf | VDD=30V,ID=30A, RG=6.8,VGS=10V | - | - | 7.5 ns | - | |
| Gate Charge Characteristics | Qg | VDS=30V, ID=30A ,VGS=10V | - | - | 104 nC | - |
| Qgs | VDS=30V, ID=30A ,VGS=10V | - | - | 16 nC | - | |
| Qgd | VDS=30V, ID=30A ,VGS=10V | - | - | 22 nC | - | |
| Thermal Resistance, Junction-to-Case | RJC | - | 1.48 | 0.8 | C /W | Typical |
| Thermal Resistance, Junction-to-Ambient | RJA | - | 62.5 | - | C /W | Typical |
2410010000_KIA-Semicon-Tech-KNB3306B_C176838.pdf
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