N Channel Planar MOSFET KIA Semicon Tech KNF10N65B 10A 650V with Low Gate Charge and RoHS Compliance
Key Attributes
Model Number:
KNF10N65B
Product Custom Attributes
Drain To Source Voltage:
650V
Current - Continuous Drain(Id):
10A
RDS(on):
750mΩ@10V
Gate Threshold Voltage (Vgs(th)):
4V
Reverse Transfer Capacitance (Crss@Vds):
14pF
Input Capacitance(Ciss):
1.6nF
Output Capacitance(Coss):
110pF
Pd - Power Dissipation:
45W
Gate Charge(Qg):
30nC@10V
Mfr. Part #:
KNF10N65B
Package:
TO-220F
Product Description
Product Overview
This is a 10A, 650V N-Channel Planar MOSFET (Model: 10N65B) from KMOS Semiconductor. It features an advanced planar process, low gate charge to minimize switching loss, and a fast recovery body diode. It is RoHS compliant and offers a typical RDS(ON) of 0.75. Ideal for adaptors, chargers, and SMPS standby power applications.
Product Attributes
- Brand: KMOS Semiconductor
- Model: 10N65B
- Package: TO-220F
- Certifications: RoHS Compliant
Technical Specifications
| Parameter | Symbol | Ratings | Unit | Test Conditions |
| Drain-to-Source Voltage | VDSS | 650 | V | |
| Gate-to-Source Voltage | VGSS | ±30 | V | |
| Continuous Drain Current | ID | 10 | A | |
| Pulsed Drain Current | IDM | 40 | A | VGS=10V |
| Single Pulse Avalanche Energy | EAS | 800 | mJ | |
| Power Dissipation | PD | 45 | W | TC= 25 ºC |
| Derating Factor above 25ºC | PD | 0.36 | W/ºC | |
| Soldering Temperature | TL | 300 | ºC | Distance of 1.6mm from case for 10 seconds |
| Operating and Storage Temperature Range | TJ&TSTG | -55 to 150 | ºC | |
| Thermal Resistance, Junction-to-Case | RθJC | 2.78 | ºC/W | |
| Thermal Resistance, Junction-to-Ambient | RθJA | 100 | ºC/W | |
| Drain-to-Source Breakdown Voltage | BVDSS | 650 | V | VGS=0V, ID=250uA |
| Drain-to-Source Leakage Current | IDSS | 1 | uA | VDS=650V, VGS=0V |
| Drain-to-Source Leakage Current (TJ=125ºC) | IDSS | 100 | uA | VDS=520V, VGS=0V |
| Gate-to-Source Leakage Current | IGSS | ±100 | nA | VGS=±30V, VDS=0V |
| Drain-to-Source ON Resistance | RDS(ON) | 0.75 (typ.) | Ω | VGS=10V, ID=5A |
| Drain-to-Source ON Resistance (Max) | RDS(ON) | 0.9 | Ω | VGS=10V, ID=5A |
| Gate Threshold Voltage | VGS(TH) | 2.0 - 4.0 | V | VDS=VGS,ID=250uA |
| Forward Transconductance | gfs | 8 | S | VDS=15V,ID=5A |
| Input Capacitance | Ciss | 1600 | pF | VGS=0V,VDS=25V, f=1.0MHZ |
| Reverse Transfer Capacitance | Coss | 110 | pF | |
| Output Capacitance | Crss | 14 | pF | |
| Total Gate Charge | Qg | 30 | nC | VDD=520V,ID=10A, VGS=0 to 10V |
| Gate-to-Source Charge | Qgs | 7 | nC | |
| Gate-to-Drain (Miller) Charge | Qg d | 7.5 | nC | |
| Turn-on Delay Time | td(ON) | 10 | nS | VDD=325V, ID=10A, RG=4.7Ω,VGS=10V |
| Rise Time | trise | 14 | nS | |
| Turn-Off Delay Time | td(OFF) | 35 | nS | |
| Fall Time | tfall | 15 | nS | |
| Continuous Source Current | ISD | 10 | A | Integral PN-diode in MOSFET |
| Pulsed Source Current | ISM | 40 | A | |
| Forward Voltage | VSD | 1.5 | V | IS=10A, VGS=0V |
| Reverse recovery time | trr | 460 | ns | IF= IS, VGS=0V di/dt=100A/us |
| Reverse recovery charge | Qrr | 1.5 | uC |
2509041415_KIA-Semicon-Tech-KNF10N65B_C51883053.pdf
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