Power Management MOSFET KIA Semicon Tech KNY3303C N Channel Device with 90 Ampere Current Capacity
Key Attributes
Model Number:
KNY3303C
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
90A
Operating Temperature -:
-55℃~+150℃
RDS(on):
3.9mΩ@10V
Gate Threshold Voltage (Vgs(th)):
2.2V@250uA
Reverse Transfer Capacitance (Crss@Vds):
320pF@15V
Number:
1 N-channel
Pd - Power Dissipation:
66W
Input Capacitance(Ciss):
3.28nF@15V
Gate Charge(Qg):
60nC@10V
Mfr. Part #:
KNY3303C
Package:
DFN-8(5x6)
Product Description
90A, 30V N-CHANNEL MOSFET
This N-Channel MOSFET offers very low on-resistance (RDS(ON)), low Crss, and fast switching capabilities. It is 100% avalanche tested and features improved dv/dt capability. Ideal for PWM applications, load switching, and power management.
Product Attributes
- Brand: KIA
- Part Number: KNG3303C, KNY3303C, KND3303C
- Origin: KIA SEMICONDUCTORS
Technical Specifications
| Parameter | Symbol | DFN3*3/5*6 | TO-252 | Unit | Conditions |
| Drain-source breakdown voltage | BVDSS | 30 | V | VGS=0V,ID=250uA | |
| Drain-source leakage current | IDSS | 1 | uA | VDS=30V, VGS=0V | |
| Gate-source forward leakage | IGSS | 100 | nA | VGS=20V, VDS=0V | |
| Gate threshold voltage | VGS(TH) | 1.0 - 2.2 | V | VDS=VGS,ID=250uA | |
| Drain-source on-resistance | RDS(on) | 2.6 - 3.9 | 3.2 - 4.0 | m | VGS=10V, ID=20A |
| 3.9 - 5.6 | 4.5 - 5.6 | VGS=4.5V, ID=15A | |||
| 2.6 (typ.) | VGS=10V | ||||
| 3.2 (typ.) | VGS=10V | ||||
| Input capacitance | Ciss | 3280 | pF | VDS=15V,VGS=0V f=1MHz | |
| Output capacitance | Coss | 360 | pF | VDS=15V,VGS=0V f=1MHz | |
| Reverse transfer capacitance | Crss | 320 | pF | VDS=15V,VGS=0V f=1MHz | |
| Turn-on delay time | td(on) | 10 | ns | VGS=10V, VDS=10V RL=3, ID=30A | |
| Rise time | tr | 100 | ns | ||
| Turn-off delay time | td(off) | 54 | ns | VGS=10V, VDS=10V RL=3, ID=30A | |
| Fall time | tf | 98 | ns | ||
| Total gate charge(10V) | Qg | 60 | nC | VDS=10V, ID=30A VGS=10V | |
| Gate-source charge | Qgs | 28 | nC | VDS=10V, ID=30A VGS=10V | |
| Gate-drain charge | Qg | 3 | nC | VDS=10V, ID=30A VGS=10V | |
| Maximum Continuous Drain-Source Diode Forward Current | IS | 100 | A | TC=25C | |
| Maximum Pulsed Drain-Source Diode Forward Current | ISM | 400 | A | - | |
| Diode forward voltage | VSD | 1.2 | V | ISD=20A,VGS=0V, TJ=25C | |
| Reverse recovery time | Trr | 20 | ns | IF=20A dl/dt=100A/s | |
| Reverse recovery charge | Qrr | 10 | nC | IF=20A dlF/dt=100A//s | |
| Thermal resistance junction-case | RJC | 1.9 | 1.78 | C/W | - |
| Drain-source voltage | VDSS | 30 | V | - | |
| Continuous drain current | ID | 90 | 90 | A | TC=25C |
| 59 | 59 | TC=100C | |||
| Pulsed drain current | IDM | 400 | A | - | |
| Gate-source voltage | VGS | 20 | V | - | |
| Single pulse avalanche energy | EAS | 289 | mJ | TJ=25C, VDD=15V, VG=10V, RG=25,L=0.5mH | |
| Power dissipation | PD | 66 | W | TC=25C | |
| 70 | TC=25C | ||||
| Operating junction and storage temperature range | TJ ,TSTG | -55 to150 | C | - | |
| Maximum lead temperature for soldering purposes,1/8" from case for 5 seconds | TL | 300 | C | - | |
2411121110_KIA-Semicon-Tech-KNY3303C_C41369539.pdf
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