power management solution KIA Semicon Tech KNY3404D 80A 40V N channel MOSFET with low on resistance
Key Attributes
Model Number:
KNY3404D
Product Custom Attributes
Drain To Source Voltage:
40V
Current - Continuous Drain(Id):
80A
RDS(on):
5.2mΩ@10V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
1.5V
Reverse Transfer Capacitance (Crss@Vds):
225pF
Output Capacitance(Coss):
250pF
Pd - Power Dissipation:
64W
Input Capacitance(Ciss):
2.68nF
Gate Charge(Qg):
58nC@10V
Mfr. Part #:
KNY3404D
Package:
DFN5x6
Product Description
Product Overview
The KIA SEMICONDUCTORS 3404D is an 80A, 40V N-CHANNEL MOSFET designed for efficient power management. It features very low on-resistance (RDS(ON)=5.2m typ. @VGS=10V), low Crss, fast switching, 100% avalanche tested, and improved dv/dt capability. This MOSFET is ideal for PWM applications, power management, and load switching.
Product Attributes
- Brand: KIA
- Part Number: KNY3404D
- Package: DFN5*6
Technical Specifications
| Parameter | Symbol | Rating | Unit | Test Conditions |
| Drain-source voltage | VDSS | 40 | V | |
| Continuous drain current | ID | 80 | A | TC=25C |
| Continuous drain current | ID | 52 | A | TC=100C |
| Pulsed drain current | IDM | 320 | A | -Pulsed 1) |
| Gate-source voltage | VGS | 20 | V | |
| Single pulse avalanche energy | EAS | 210 | mJ | 2) |
| Power dissipation | PD | 64 | W | TC=25C |
| Operating junction and storage temperature range | TJ ,TSTG | -55 to150 | C | |
| Maximum lead temperature for soldering purposes | TL | 300 | C | 1/8" from case for 5 seconds |
| Drain-source breakdown voltage | BVDSS | 40 | V | VGS=0V,ID=250uA |
| Drain-source leakage current | IDSS | 1 | uA | VDS=40V, VGS=0V |
| Gate-source forward leakage | IGSS | 100 | nA | VGS=20V, VDS=0V |
| Gate threshold voltage | VGS(TH) | 1.0 - 2.5 | V | VDS=VGS,ID=250uA |
| Drain-source on-resistance | RDS(on) | 5.2 - 5.5 | m | VGS=10V,ID=30A |
| Drain-source on-resistance | RDS(on) | 7.2 - 10 | m | VGS=4.5V,ID=20A |
| Gate Resistance | RG | - 2.6 - | f=1MHz | |
| Input capacitance | Ciss | - 2680 - | pF | VDS=15V,VGS=0V f=1MHz |
| Output capacitance | Coss | - 250 - | pF | |
| Reverse transfer capacitance | Crss | - 225 - | pF | |
| Turn-on delay time | td(on) | - 7.3 - | ns | VGS=10V,VDS=20V, RG=3, ID=30A 3) |
| Rise time | tr | - 16 - | ns | |
| Turn-off delay time | td(off) | - 22 - | ns | |
| Fall time | tf | - 13 - | ns | |
| Total gate charge(10V) | Qg | - 58 - | nC | VDS=20V, ID=30A VGS=10V 3) |
| Gate-source charge | Qgs | - 10 - | nC | |
| Gate-drain charge | Qg d | - 12 - | nC | |
| Maximum Continuous Drain-Source Diode Forward Current | IS | - - 80 | A | |
| Maximum Pulsed Drain-Source Diode Forward Current | ISM | - - 320 | A | |
| Diode forward voltage | VSD | - - 1.2 | V | ISD=20A,VGS=0V, TJ=25C |
Notes:
1. Repetitive Rating: Pulse Width Limited by Maximum Junction Temperature
2. EAS condition: TJ=25C, VDD=20V,VG=10V,L=0.5mH,Rg=25
3. Pulse Test: Pulse Width300s, Duty Cycle0.5%
2508261745_KIA-Semicon-Tech-KNY3404D_C7465103.pdf
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