High current power transistor KIA Semicon Tech KND2803A 150A 30V N channel MOSFET with trench design
Key Attributes
Model Number:
KND2803A
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
150A
Operating Temperature -:
-55℃~+175℃
RDS(on):
3mΩ@10V
Gate Threshold Voltage (Vgs(th)):
2V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
355pF
Number:
1 N-channel
Output Capacitance(Coss):
680pF
Input Capacitance(Ciss):
4.05nF
Pd - Power Dissipation:
50W
Gate Charge(Qg):
110nC
Mfr. Part #:
KND2803A
Package:
TO-252
Product Description
Product Overview
The KNX2803A is a 150A, 30V N-CHANNEL MOSFET designed using trench processing techniques to achieve extremely low on-resistance. It features a 175C junction operating temperature, fast switching speed, and improved repetitive avalanche rating, making it an efficient and reliable device for motor applications and various other uses.
Product Attributes
- Brand: KIA SEMICONDUCTORS
- Certifications: Lead-Free, RoHS Compliant
Technical Specifications
| Parameter | Symbol | Conditions | TO-252 | TO-263/220 | Units | |
| Absolute Maximum Ratings | ||||||
| Drain-source voltage | VDSS | 30 | 30 | V | ||
| Gate-source voltage | VGSS | ±20 | ±20 | V | ||
| Continuous drain current @VGS=10V,TC=25 C | ID | (See Fig2) | 150 | 150 | A | |
| Pulsed drain current | IDM | TC=25 C (Silicon Limit) | 600 | 600 | A | |
| Avalanche energy single pulse | EAS | 625 | 625 | mJ | ||
| Maximum Power dissipation | PD | TC=25 C | 50 | 160 | W | |
| Maximum junction temperature | TJ | 175 | 175 | °C | ||
| Storage temperature range | TSTG | -55~+175 | -55~+175 | °C | ||
| Diode continuous forward current | IS | TC=25 C | 150 | 150 | A | |
| Thermal Characteristics | ||||||
| Thermal resistance, Junction-to-case | θJC | 3.0 | 0.93 | ºC/W | ||
| Electrical Characteristics | ||||||
| Drain-source breakdown voltage | BVDSS | VGS=0V,ID=250µA | 30 | 30 | V | |
| Drain-to-source leakage current | IDSS | VDS=24V ,VGS=0V | - | - | µA | |
| TC=125 ºC | - | - | µA | |||
| Gate-to-source leakage current | IGSS | VGS=20V,VDS=0V | - | - | nA | |
| VGS=-20V,VDS=0V | - | - | nA | |||
| Gate threshold voltage | VGS(th) | VDS=VGS, ID=250µA | 0.8 | 1.3 | 2.0 V | |
| Static drain-source on-resistance | RDS(on) | VGS=10V,ID=40A | - | 2.2 | 3.0 mΩ | |
| Static drain-source on-resistance | RDS(on) | VGS=4.5V,ID=40A | - | 2.8 | 4.0 mΩ | |
| Input capacitance | Ciss | VDS=15V,VGS=0V,f=1.0MHz | - | 4050 | pF | |
| Output capacitance | Coss | - | 680 | - | ||
| Reverse transfer capacitance | Crss | - | 355 | - | ||
| Total gate charge | Qg | VDS=15V,ID=20A,VGS=4.5V | - | 110 | nC | |
| Gate-source charge | Qgs | - | 35 | - | ||
| Gate-drain (Miller)charge | Qgd | - | 14 | - | ||
| Turn-on delay time | Td(ON) | VDD=15V,ID=10A,VGS=4.5V, RG=6.8Ω | - | 19 | nS | |
| Rise time | trise | - | 50 | - | ||
| Turn-off delay time | Td(OFF) | - | 20 | - | ||
| Fall time | tfall | - | 26 | - | ||
| Source-drain body diode characteristics | ||||||
| Diode forward voltage | VSD | TJ=25ºC, VGS=0V,ISD=20A | - | - | 1.3 V | |
| Reverse recovery time | trr | TJ=25ºC, ISD=30A,diF/dt=100A/μs, VGS=0V | - | 32 | ns | |
| Reverse recovery charge | Qrr | - | 33 | nC | ||
2410010001_KIA-Semicon-Tech-KND2803A_C382147.pdf
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