N Channel Power MOSFET 130A 60V Featuring KIA Semicon Tech KNP2906C Suitable for High Current Applications
Key Attributes
Model Number:
KNP2906C
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
130A
RDS(on):
4.6mΩ@10V
Gate Threshold Voltage (Vgs(th)):
3V
Reverse Transfer Capacitance (Crss@Vds):
283pF
Output Capacitance(Coss):
340pF
Input Capacitance(Ciss):
6.5nF
Pd - Power Dissipation:
136W
Gate Charge(Qg):
120nC@10V
Mfr. Part #:
KNP2906C
Package:
TO-220
Product Description
130A, 60V N-Channel Power MOSFET - KIA SEMICONDUCTORS
This document details the 130A, 60V N-Channel Power MOSFET from KIA SEMICONDUCTORS, featuring Advanced Trench technology for enhanced performance. Key advantages include low RDS(ON), super low gate charge, and excellent CdV/dt effect decline. The device is 100% Vds and UIS tested, with a green device option available. It is suitable for various power management applications requiring high current and voltage handling capabilities.
Product Attributes
- Brand: KIA
- Origin: KIA SEMICONDUCTORS
- Model Name: KMOS Semiconductor
- Part Numbers: KNP2906C (TO-220), KNH2906C (TO-3P)
- Technology: Advanced Trench
- Certifications: Green Device Available
Technical Specifications
| Parameter | Symbol | Conditions | Min. | Typ. | Max. | Unit |
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V, ID=250uA | 60 | - | - | V |
| Gate Threshold Voltage | VGS(th) | VGS=VDS, ID=250uA | 2 | 3 | 4 | V |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=10V, ID=30A, TO-220 | - | 4.6 | 5.8 | m |
| VGS=10V, ID=30A, TO-3P | - | 4.7 | 5.8 | m | ||
| Continuous Drain Current | ID | TC=25C | - | - | 130 | A |
| TC=100C | - | - | 82 | A | ||
| Pulsed Drain Current | IDM | @ Current-Pulsed | - | - | 440 | A |
| Total Power Dissipation | PD | TC=25C | - | - | 136 | W |
| Avalanche Energy | EAS | - | - | 342 | mJ | |
| Operation Junction and Storage Temperature Range | TJ,TSTG | - | -55 | - | 150 | C |
| Thermal Resistance, Junction-to-Case | RJC | - | - | - | 1.1 | C/W |
| Drain-Source Leakage Current | IDSS | VDS=60V,VGS=0V, TC=25C | - | - | 1 | uA |
| Gate-Source Leakage Current | IGSS | VGS=20V, VDS=0V | - | - | 100 | nA |
| Gate Resistance | Rg | VDS=0V, VGS=0V,f=1.0MHz | - | 0.5 | - | |
| Input Capacitance | Ciss | VDS=30V, VGS=0V , f=1.0MHz | - | 6500 | - | pF |
| Output Capacitance | Coss | - | - | 340 | - | pF |
| Reverse Transfer Capacitance | Crss | - | - | 283 | - | pF |
| Turn-On Delay Time | td(on) | VDS=30V, VGS=10V, RG=3.0, ID=20A | - | 18 | - | ns |
| Rise Time | tr | - | - | 80 | - | ns |
| Turn-Off Delay Time | td(off) | - | - | 35 | - | ns |
| Fall Time | tf | - | - | 87 | - | ns |
| Total Gate Charge | Qg | VDS=30V, VGS=10V , ID=20A | - | 120 | - | nC |
| Gate-Source Charge | Qgs | - | - | 30 | - | nC |
| Gate-Drain Charge | Qg | - | - | 35 | - | nC |
| Source-Drain Current (Body Diode) | ISD | - | - | - | 130 | A |
| Diode Forward Voltage | VSD | VGS=0V, ISD=30A,TJ=25C | - | - | 1.2 | V |
| Reverse Recovery Time | trr | TJ=25C, IF=30A, di/dt=100A/s | - | 36 | - | nS |
| Reverse Recovery Charge | Qrr | - | - | 55 | - | nC |
2509041415_KIA-Semicon-Tech-KNP2906C_C51883056.pdf
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