Power switching MOSFET KIA Semicon Tech KNB3306C featuring 68 volt rating and low Crss for operation
Key Attributes
Model Number:
KNB3306C
Product Custom Attributes
Drain To Source Voltage:
68V
Current - Continuous Drain(Id):
80A
RDS(on):
6.5mΩ@10V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
3V
Reverse Transfer Capacitance (Crss@Vds):
210pF
Output Capacitance(Coss):
230pF
Input Capacitance(Ciss):
5.85nF
Pd - Power Dissipation:
125W
Gate Charge(Qg):
92.6nC@10V
Mfr. Part #:
KNB3306C
Package:
TO-263
Product Description
Product Overview
This 80A, 68V N-CHANNEL MOSFET from KIA SEMICONDUCTORS, model 3306C, offers very low on-resistance (RDS(ON)=6.5m typ. @VGS=10V), low Crss, and fast switching capabilities. It is 100% avalanche tested and features improved dv/dt capability, making it suitable for PWM applications, power management, and load switching.
Product Attributes
- Brand: KIA
- Part Number: KND3306C (TO-252), KNB3306C (TO-263)
- Origin: KIA SEMICONDUCTORS
Technical Specifications
| Parameter | Symbol | Rating | Units | Test Conditions | |
| Absolute Maximum Ratings | VDSS | 68 | V | ||
| ID | 80 | A | TC=25C | ||
| ID | 52 | A | TC=100C | ||
| IDM | 320 | A | Pulsed | ||
| Electrical Characteristics | BVDSS | 68 | V | VGS=0V,ID=250uA | |
| IDSS | - | 1 | uA | VDS=68V, VGS=0V | |
| IGSS | - | ±100 | nA | VGS=±20V, VDS=0V | |
| On-Resistance | RDS(on) | - | 6.5-8.5 | mΩ | VGS=10V,ID=20A |
| RDS(on) | - | 6.5 | mΩ | VGS=10V,ID=20A (typ.) | |
| RDS(on) | - | 8.5 | mΩ | VGS=10V,ID=20A (max.) | |
| Capacitance | Ciss | - | 5850 | pF | VDS=35V,VGS=0V f=1MHz |
| Coss | - | 230 | pF | VDS=35V,VGS=0V f=1MHz | |
| Crss | - | 210 | pF | VDS=35V,VGS=0V f=1MHz | |
| Switching Characteristics | td(on) | - | 25 | ns | VGS=10V,VDS=35V, RL=3Ω, ID=40A, TJ=25°C |
| tr | - | 24 | ns | VGS=10V,VDS=35V, RL=3Ω, ID=40A, TJ=25°C | |
| td(off) | - | 48 | ns | VGS=10V,VDS=35V, RL=3Ω, ID=40A, TJ=25°C | |
| tf | - | 10 | ns | VGS=10V,VDS=35V, RL=3Ω, ID=40A, TJ=25°C | |
| Gate Charge | Qg | - | 92.6 | nC | VDS=60V, ID=40A VGS=10V |
| Qgs | - | 23 | nC | VDS=60V, ID=40A VGS=10V | |
| Qgd | - | 37 | nC | VDS=60V, ID=40A VGS=10V | |
| Diode Characteristics | IS | - | 80 | A | Maximum Continuous Drain-Source Diode Forward Current |
| ISM | - | 320 | A | Maximum Pulsed Drain-Source Diode Forward Current |
2508261745_KIA-Semicon-Tech-KNB3306C_C7465109.pdf
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