130A N CHANNEL MOSFET KIA Semicon Tech KNB2910A designed for synchronous rectification and switching
Key Attributes
Model Number:
KNB2910A
Product Custom Attributes
Drain To Source Voltage:
100V
Current - Continuous Drain(Id):
130A
Operating Temperature -:
-
RDS(on):
9mΩ@10V,70A
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
350pF
Number:
1 N-channel
Input Capacitance(Ciss):
6.8nF
Output Capacitance(Coss):
630pF
Pd - Power Dissipation:
300W
Gate Charge(Qg):
130nC@10V
Mfr. Part #:
KNB2910A
Package:
TO-263-2
Product Description
Product Overview
The KIA SEMICONDUCTORS 2910A is a 130A, 100V N-CHANNEL MOSFET designed for high efficiency synchronous rectification in SMPS and high-speed power switching applications. It features an ultra-low On-Resistance of 7.0m at VGS=10V, a super high dense cell design, and is 100% avalanche tested. Lead-Free and Green devices are available (RoHS Compliant).
Product Attributes
- Brand: KIA SEMICONDUCTORS
- Product Name: 2910A
- Type: N-CHANNEL MOSFET
- Certifications: RoHS Compliant (Lead Free and Green devices available)
Technical Specifications
| Parameter | Symbol | Conditions | Min | Typ | Max | Units | TO-220/263 | TO-3P | |
| Absolute Maximum Ratings | |||||||||
| Drain-source voltage | VDSS | 100 | V | ✔ | ✔ | ||||
| Gate-source voltage | VGSS | ±25 | V | ✔ | ✔ | ||||
| Continuous drain current | ID | TC=25 ℃2 | 130 | A | ✔ | ✔ | |||
| Continuous drain current | ID | TC=100 ℃2 | 99 | A | ✔ | ✔ | |||
| Pulsed drain current | IDP | TC=25 ℃1, 300µs | 560 | A | ✔ | ✔ | |||
| Avalanche energy single pulse | EAS | 3 | 552 | mJ | ✔ | ✔ | |||
| Power dissipation | PD | TC=25 ℃ | 300 | 375 | W | ✔ | ✔ | ||
| Power dissipation | PD | TC=100 ℃ | 150 | 187.5 | W | ✔ | ✔ | ||
| Maximum junction temperature | TJ | 175 | ℃ | ✔ | ✔ | ||||
| Storage temperature range | TSTG | -55 | ~ | +175 | ℃ | ✔ | ✔ | ||
| Diode continuous forward current | IS | TC=25 ℃ | 140 | A | ✔ | ✔ | |||
| Thermal Characteristics | |||||||||
| Thermal resistance, Junction-to-case | θJC | 0.5 | ℃/W | ✔ | ✔ | ||||
| Thermal resistance, Junction-to-ambient | θJA | 62.5 | ℃/W | ✔ | ✔ | ||||
| Electrical Characteristics | |||||||||
| Off Characteristics | |||||||||
| Drain-source breakdown voltage | BVDSS | VGS=0V,ID=250µA | 100 | V | ✔ | ✔ | |||
| Drain-to-source leakage current | IDSS | VDS=100V ,VGS=0V | 1 | µA | ✔ | ✔ | |||
| Drain-to-source leakage current | IDSS | TJ=125 ℃ | 30 | µA | ✔ | ✔ | |||
| Gate-to-source leakage current | IGSS | VGS=25V,VDS=0V | 100 | nA | ✔ | ✔ | |||
| Gate-to-source leakage current | IGSS | VGS=-25V,VDS=0V | -100 | nA | ✔ | ✔ | |||
| On Characteristics | |||||||||
| Gate threshold voltage | VGS(th) | VDS=VGS, ID=250µA | 2.0 | 4.0 | V | ✔ | ✔ | ||
| Static drain-source on-resistance | RDS(on) | 4, VGS=10V,ID=70A | 7.0 | 9.0 | mΩ | ✔ | ✔ | ||
| Gate Charge Characteristics | |||||||||
| Total gate charge | Qg | 5, VDS=80V,ID=70A,VGS=10V | 130 | nC | ✔ | ✔ | |||
| Gate-source charge | Qgs | 5 | 32 | ✔ | ✔ | ||||
| Gate-drain (Miller)charge | Qg d | 5 | 55 | ✔ | ✔ | ||||
| Dynamic Characteristics | |||||||||
| Gate series resistance | RG | 5, VDS=0V,VGS=0V,f=1.0MHz | 1 | Ω | ✔ | ✔ | |||
| Turn-on delay time | Td(ON) | 5, VDD=50V,ID=70A,VGEN=10V, RG=5Ω | 24 | nS | ✔ | ✔ | |||
| Rise time | trise | 5 | 91 | ✔ | ✔ | ||||
| Turn-off delay time | Td(OFF) | 5 | 75 | ✔ | ✔ | ||||
| Fall time | tfall | 5 | 65 | ✔ | ✔ | ||||
| Input capacitance | Ciss | 5, VDS=50V,VGS=0V,f=1.0MHz | 6800 | pF | ✔ | ✔ | |||
| Output capacitance | Coss | 5 | 630 | ✔ | ✔ | ||||
| Reverse transfer capacitance | Crss | 5 | 350 | ✔ | ✔ | ||||
| Source-drain body diode characteristics | |||||||||
| Diode forward voltage | VSD | 4, TJ=25℃, VGS=0V,IS=70A | 1.2 | V | ✔ | ✔ | |||
| Reverse recovery time | trr | TJ=25℃, ISD=70A,diF/dt=100A/µs | 43 | nS | ✔ | ✔ | |||
| Reverse recovery charge | Qrr | TJ=25℃ | 67 | nC | ✔ | ✔ | |||
2411121021_KIA-Semicon-Tech-KNB2910A_C176890.pdf
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