P Channel MOSFET KIA Semicon Tech KIA2301 with Drain Source Voltage 20V and Pulsed Drain Current 10A
Key Attributes
Model Number:
KIA2301
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
2.8A
Operating Temperature -:
-55℃~+150℃
RDS(on):
190mΩ@2.5V,1.8A
Gate Threshold Voltage (Vgs(th)):
1V@250uA
Type:
-
Reverse Transfer Capacitance (Crss@Vds):
87pF
Number:
-
Output Capacitance(Coss):
415pF
Input Capacitance(Ciss):
-
Pd - Power Dissipation:
1.25W
Gate Charge(Qg):
10nC@4.5V
Mfr. Part #:
KIA2301
Package:
SOT-23
Product Description
Product Overview
This P-CHANNEL MOSFET from KIA SEMICONDUCTORS offers a drain-source voltage of -20V and a continuous drain current of -2.8A. It is designed for applications requiring efficient switching and power management, with low on-state resistance at various gate-source voltages.
Product Attributes
- Brand: KIA SEMICONDUCTORS
- Model: 2301
Technical Specifications
| Parameter | Symbol | Rating | Units | Test Conditions | Min | Typ | Max |
| Drain-source voltage | VDS | -20 | V | ||||
| Gate-source voltage | VGS | +8 | V | ||||
| Drain current continuous (TJ=150 C) | ID | -2.8 | A | TA=25C | |||
| Drain current continuous (TJ=150 C) | ID | -1.5 | A | TA=70C | |||
| Pulsed drain current | IDM | -10 | A | a | |||
| Continuous source current (diode conduction) | IS | -1.6 | A | b | |||
| Power dissipation | PD | 1.25 | W | TA=25C b | |||
| Power dissipation | PD | 0.8 | W | TA=70C b | |||
| Junction and storage temperature range | TJ ,TSTG | -55 to150 | C | ||||
| Maximum junction-ambient thermal resistance | RthJA | 100 | C/W | b | |||
| Maximum junction-ambient thermal resistance | RthJA | 166 | C/W | c | |||
| Drain-source breakdown voltage | V(BR)DSS | -20 | V | VGS=0V,ID=-250A | -20 | ||
| Gate threshold voltage | VGS(th) | -0.5 | V | VDS=VGS, ID=-250A | -0.5 | -1.0 | |
| Gate-body leakage | IGSS | +100 | nA | VGS=+8V, VDS=0V | +100 | ||
| Zero gate voltage drain current | IDSS | -50 | nA | VDS=-16V, VGS=0V | -50 | ||
| On-state drain current | ID(on) | -6 | A | VDS<-5V, VGS=-4.5V a | -6 | ||
| On-state drain current | ID(on) | -3 | A | VDS<-5V, VGS=-2.5V a | -3 | ||
| Static drain-source on-resistance | RDS(on) | 0.12 | VGS=-4.5V,ID=-2.8A a | 0.105 | 0.12 | ||
| Static drain-source on-resistance | RDS(on) | 0.19 | VGS=-2.5V,ID=-1.8A a | 0.145 | 0.19 | ||
| Forward transconductance | gfs | 6.5 | S | VDS=-5V, ID=-2.3A a | 6.5 | ||
| Diode forward voltage | VSD | -0.8 | V | VGS=0V,IS=-1.6A | -0.8 | -1.2 | |
| Total gate charge | Qg | 5.8 | nC | VDS=-6.0V, VGS=-4.5V ID=-2.3A | 5.8 | 10 | |
| Gate-source charge | Qgs | 0.85 | 0.85 | ||||
| Gate-drain charge | Qg d | 1.7 | 1.7 | ||||
| Input capacitance | Ciss | 415 | pF | VDS=-6V,VGS=0V, f=1MHz | 415 | ||
| Output capacitance | Coss | 223 | pF | 223 | |||
| Reverse transfer capacitance | Crss | 87 | pF | 87 | |||
| Turn-on delay time | td(on) | 13 | ns | VDD=-6V, ID =-1.0A, RL=6, RG=6, VGEN=-4.5V | 13 | 25 | |
| Rise time | tr | 36 | ns | 36 | 60 | ||
| Turn-off delay time | td(off) | 42 | ns | 42 | 70 | ||
| Fall time | tf | 34 | ns | 34 | 60 |
2409302333_KIA-Semicon-Tech-KIA2301_C114185.pdf
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