30A 40V MOSFET KIA Semicon Tech KNS8104A featuring improved dv dt and low gate charge for PWM control
Key Attributes
Model Number:
KNS8104A
Product Custom Attributes
Drain To Source Voltage:
40V
Current - Continuous Drain(Id):
30A
RDS(on):
16mΩ@10V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
2.5V@250uA
Reverse Transfer Capacitance (Crss@Vds):
62pF
Number:
1 N-channel
Output Capacitance(Coss):
70pF
Input Capacitance(Ciss):
850pF
Pd - Power Dissipation:
48W
Gate Charge(Qg):
18nC@10V
Mfr. Part #:
KNS8104A
Package:
SOT-89
Product Description
Product Overview
30A, 40V N-CHANNEL MOSFET. Features very low on-resistance (RDS(ON)=12m typ. @VGS=10V), low Crss, and fast switching. 100% avalanche tested with improved dv/dt capability. Ideal for PWM applications, power management, and load switches.
Product Attributes
- Brand: KIA
- Part Number: KNS8104A
- Package: SOT-89
Technical Specifications
| Parameter | Symbol | Rating | Units | Test Conditions |
| Drain-source voltage | VDSS | 40 | V | TC=25C unless otherwise noted |
| Continuous drain current | ID | 30 | A | TC=25C |
| Continuous drain current | ID | 19 | A | TC=100C |
| Pulsed drain current | IDM | 120 | A | -Pulsed 1) |
| Gate-source voltage | VGS | 20 | V | |
| Single pulse avalanche energy | EAS | 25 | mJ | 2) |
| Power dissipation | PD | 48 | W | (TC=25C) |
| Operating junction and storage temperature range | TJ ,TSTG | -55 to150 | C | |
| Maximum lead temperature for soldering purposes,1/8" from case for 5 seconds | TL | 300 | C | |
| Drain-source breakdown voltage | BVDSS | 40 | V | VGS=0V,ID=250uA |
| Drain-source leakage current | IDSS | 1 | uA | VDS=40V, VGS=0V |
| Gate-source forward leakage | IGSS | 100 | nA | VGS=20V, VDS=0V |
| Gate threshold voltage | VGS(TH) | 1.0 1.5 2.5 | V | VDS= VGS,ID=250uA |
| Drain-source on-resistance | RDS(on) | 12 16 | m | VGS=10V,ID=20A |
| Drain-source on-resistance | RDS(on) | 16.5 24 | m | VGS=4.5V,ID=10A |
| Gate Resistance | RG | 4 | f=1MHz | |
| Input capacitance | Ciss | 850 | pF | VDS=20V,VGS=0V f=1MHz |
| Output capacitance | Coss | 70 | pF | |
| Reverse transfer capacitance | Crss | 62 | pF | |
| Turn-on delay time | td(on) | 4 | ns | VGS=10V,VDS=30V, RG=4.7, ID=30A 3) |
| Rise time | tr | 8 | ns | |
| Turn-off delay time | td(off) | 30 | ns | |
| Fall time | tf | 10 | ns | |
| Total gate charge(10V) | Qg | 18 | nC | VDS=20V, ID=30A VGS=10V 3) |
| Gate-source charge | Qgs | 2.5 | nC | |
| Gate-drain charge | Qgd | 5 | nC | |
| Maximum Continuous Drain-Source Diode Forward Current | IS | 30 | A | |
| Maximum Pulsed Drain-Source Diode Forward Current | ISM | 120 | A | |
| Diode forward voltage | VSD | 1.2 | V | ISD=20A,VGS=0V,TJ=25C |
2411121110_KIA-Semicon-Tech-KNS8104A_C41369547.pdf
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