Schottky Diode Rectifier JUXING SS34A60 Featuring Low Forward Voltage and Fast Reverse Recovery Time
Key Attributes
Model Number:
SS34A60
Product Custom Attributes
Non-Repetitive Peak Forward Surge Current:
100A
Reverse Leakage Current (Ir):
500uA
Operating Junction Temperature Range:
-55℃~+125℃
Voltage - DC Reverse (Vr) (Max):
40V
Voltage - Forward(Vf@If):
550mV@3A
Current - Rectified:
3A
Mfr. Part #:
SS34A60
Package:
DO-214AC(SMA)
Product Description
Product Overview
The SS32~SS3200 series are surface mount Schottky rectifiers designed for high-efficiency applications. Featuring a low profile package ideal for automated placement, these rectifiers offer ultrafast reverse recovery times, low power losses, and high efficiency. They are suitable for various applications requiring high surge capability and low forward voltage drop.
Product Attributes
- Brand: TRR-JX
- Origin: Not specified
- Material: Not specified
- Color: Not specified
- Certifications: RoHS 2002/95/1, WEEE 2002/96/EC
Technical Specifications
| Type Number | VRRM (V) | VRMS (V) | VDC (V) | IF(AV) (A) | IFSM (A) | VF (V) @ 3.0A | TJ max. (C) | RJL (C/W) | RJA (C/W) | IR (mA) @ VR |
| SS32 | 20 | 14 | 20 | 3.0 | 70 | 0.55 (TA=25C) / 0.70 (TA=100C) | 150 | 17 | 55 | 0.95 (TA=25C) / 0.80 (TA=100C) / 0.5 (TA=125C) |
| SS34 | 40 | 28 | 40 | 3.0 | 70 | 0.55 (TA=25C) / 0.70 (TA=100C) | 150 | 17 | 55 | 0.95 (TA=25C) / 0.80 (TA=100C) / 0.5 (TA=125C) |
| SS36 | 60 | 42 | 60 | 3.0 | 100 | 0.70 (TA=25C) / 0.85 (TA=100C) | 150 | 17 | 55 | 0.95 (TA=25C) / 0.80 (TA=100C) / 0.5 (TA=125C) |
| SS38 | 80 | 56 | 80 | 3.0 | 100 | 0.70 (TA=25C) / 0.85 (TA=100C) | 150 | 17 | 55 | 0.95 (TA=25C) / 0.80 (TA=100C) / 0.5 (TA=125C) |
| SS310 | 100 | 70 | 100 | 3.0 | 100 | 0.85 (TA=25C) / 0.95 (TA=100C) | 150 | 17 | 55 | 0.95 (TA=25C) / 0.80 (TA=100C) / 0.5 (TA=125C) |
| SS3150 | 150 | 105 | 150 | 3.0 | 100 | 0.85 (TA=25C) / 0.95 (TA=100C) | 150 | 17 | 55 | 0.95 (TA=25C) / 0.80 (TA=100C) / 0.5 (TA=125C) |
| SS3200 | 200 | 130 | 200 | 3.0 | 100 | 0.85 (TA=25C) / 0.95 (TA=100C) | 150 | 17 | 55 | 0.95 (TA=25C) / 0.80 (TA=100C) / 0.5 (TA=125C) |
2309211846_JUXING-SS34A60_C18198661.pdf
Related Products
DO 214AC SMA package SMA4742AQ Zener diode with low profile design and high forward surge capability
Product OverviewThe SMA4735AQ thru SMA4764AQ series are surface mount Zener diodes featuring a low profile package ideal for automated placement. They offer high forward surge capability and meet MSL level 1 standards. The 'Q' suffix indicates AEC-Q101 qualification, making them suitable for ...
Low RDS ON N Channel MOSFET YANGJIE YJG95G06B Suitable for High Current DC DC Converter Applications
Product OverviewThe YJG95G06B is an N-Channel Enhancement Mode Field Effect Transistor manufactured by Yangzhou Yangjie Electronic Technology Co., Ltd. Utilizing Split Gate Trench MOSFET technology and a high-density cell design, this transistor offers low RDS(ON) and excellent heat dissipation ...
N Channel MOSFET YANGJIE YJA3134KB with Enhanced Load Switching and High Power Dissipation Capabilities
Product OverviewThe YJA3134KB is a N-Channel Enhancement Mode Field Effect Transistor utilizing Trench Power LV MOSFET technology. It offers high power and current handling capabilities, ESD protection up to 2.0KV (HBM), and meets UL 94 V-0 flammability rating. This device is designed for PWM ...
Silicon Carbide Power MOSFET YANGJIE YJD212040NCFG2 Designed for Fast Switching and High Temperature
Product OverviewThe YJD212040NCFG2 is a Silicon Carbide Power MOSFET (N-Channel Enhancement) designed for high-speed switching applications. It offers essentially no switching losses, reduced heat sink requirements, and a maximum working temperature of 175 C. Key features include high blocking ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
