Power Electronics MOSFET KIA Semicon Tech KND3306B 80A 60V N Channel Low RDS ON for DC DC Converters
Key Attributes
Model Number:
KND3306B
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
80A
Operating Temperature -:
-
RDS(on):
8.5mΩ@10V,40A
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
195pF
Number:
1 N-channel
Input Capacitance(Ciss):
3.08nF
Output Capacitance(Coss):
400pF
Pd - Power Dissipation:
84.5W
Gate Charge(Qg):
104nC@10V
Mfr. Part #:
KND3306B
Package:
TO-252
Product Description
Product Overview
The KIA SEMICONDUCTORS 3306B is an 80A 60V N-CHANNEL MOSFET designed for high-efficiency power applications. It features a low RDS(ON) of 7mtyp@VGS=10V, minimizing conductive losses, and a high avalanche current capability. This device is suitable for use in power supplies and DC-DC converters.
Product Attributes
- Brand: KIA
- Device Type: N-CHANNEL MOSFET
- Model: 3306B
- Certifications: Lead free and Green Device Available
Technical Specifications
| Parameter | Symbol | Conditions | TO-252 Unit | TO-263 Unit | Min | Typ | Max | Notes |
| Drain-source breakdown voltage | V(BR)DSS | VGS=0V,ID=250A | 60 | 60 | ||||
| Zero gate voltage drain current | IDSS | VDS=48V,VGS=0V TJ=125 C | 1 | 100 | A | |||
| Gate-body leakage current | IGSS | VGS=+25V,VDS=0V | +100 | nA | ||||
| Gate threshold voltage | VGS(th) | VDS=VGS, ID=250A | 2 | 3 | 4 | V | ||
| Drain-source on resistance | RDS(on) | VGS=10V,ID=40A | 7.5 | 7 | m | 8.5 | 8.0 | |
| Diode Forward Voltage | VSD1 | VGS=0V,ISD=20A | 0.85 | 1.3 | V | |||
| Diode Continuous Forwardcurrent | IS3 | 80 | 80 | *Drain current limited by maximum junction temperature. Package limitation current is 55A. | ||||
| Reverse recovery time | trr | IF=30A, di/dt=100A/s | 33 | ns | ||||
| Reverse recovery charge | Qrr | 61 | nC | |||||
| Input capacitance | Ciss | VDS=25V,VGS=0V,f=1MHz | 3080 | pF | ||||
| Output capacitance | Coss | VDS=25V,VGS=0V,f=1MHz | 400 | pF | ||||
| Reverse transfer capacitance | Crss | VDS=25V,VGS=0V,f=1MHz | 195 | pF | ||||
| Turn-on delay time | td(on) | VDD=30V,ID=30A, RG=6.8,VGS=10V | 14 | ns | ||||
| Rise time | tr | VDD=30V,ID=30A, RG=6.8,VGS=10V | 13 | ns | ||||
| Turn-off delay time | td(off) | VDD=30V,ID=30A, RG=6.8,VGS=10V | 20 | ns | ||||
| Fall time | tf | VDD=30V,ID=30A, RG=6.8,VGS=10V | 7.5 | ns | ||||
| Total gate charge | Qg | VDS=30V, ID=30A ,VGS=10V | 104 | nC | ||||
| Gate-source charge | Qgs | VDS=30V, ID=30A ,VGS=10V | 16 | nC | ||||
| Gate-drain charge | Qg d | VDS=30V, ID=30A ,VGS=10V | 22 | nC | ||||
| Thermal Resistance, Junction-to-Case | RJC | 1.48 | 0.8 | C /W | ||||
| Thermal Resistance, Junction-to-Ambient | RJA | 62.5 | C /W |
2410010000_KIA-Semicon-Tech-KND3306B_C176837.pdf
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