power conversion MOSFET KIA Semicon Tech KIA65R420FS 650V 11A N Channel for switching applications
Key Attributes
Model Number:
KIA65R420FS
Product Custom Attributes
Drain To Source Voltage:
650V
Current - Continuous Drain(Id):
11A
Operating Temperature -:
-55℃~+150℃
RDS(on):
420mΩ@10V,3.2A
Gate Threshold Voltage (Vgs(th)):
4.5V@250uA
Type:
-
Reverse Transfer Capacitance (Crss@Vds):
5pF
Number:
-
Input Capacitance(Ciss):
-
Output Capacitance(Coss):
-
Pd - Power Dissipation:
35W
Gate Charge(Qg):
33nC@10V
Mfr. Part #:
KIA65R420FS
Package:
TO-220F-3
Product Description
Product Overview
This 11A, 650V N-Channel MOSFET from KIA Semiconductors utilizes advanced super-junction technology. It is engineered to minimize conduction loss, offer superior switching performance, and provide high ruggedness for avalanche and commutation modes. This device is ideal for high-efficiency AC/DC power conversion in switching mode operations.
Product Attributes
- Brand: KIA SEMICONDUCTORS
- Product Name: 65R420
- Channel Type: N-CHANNEL
- Voltage Rating: 650V
- Current Rating: 11A
Technical Specifications
| Parameter | Symbol | Conditions | Min | Typ | Max | Unit |
| Off Characteristics | ||||||
| Drain-source breakdown voltage | BVDSS | TJ=25C, VGS=0V, ID=250A | 650 | - | - | V |
| Zero gate voltage drain current | IDSS | VDS=650V, VGS=0V | - | - | 1 | A |
| VDS=480V, TC=125C | - | - | 10 | A | ||
| Gate-body leakage current | IGSS | VGS=30V, VDS=0V | - | - | 100 | nA |
| VGS=-30V, VDS=0V | - | -100 | - | nA | ||
| Breakdown voltage temperature coefficient | BVDSS/TJ | ID=250A, referenced to 25C | - | -0.6 | - | V/C |
| On Characteristics | ||||||
| Gate threshold voltage | VGS(th) | VDS=VGS, ID=250A | 2.5 | - | 4.5 | V |
| Static drain-source on-resistance | RDS(on) | VGS=10V, ID=3.2A | - | 0.38 | 0.42 | |
| Forward transconductance | gFS | VDS=40V, ID=3.2A (note4) | - | 16 | - | S |
| Dynamic Characteristics | ||||||
| Input capacitance | Ciss | VDS=25V, VGS=0V, f=1MHz | - | 680 | - | pF |
| Output capacitance | Coss | - | 140 | - | pF | |
| Reverse transfer capacitance | Crss | - | 5 | - | pF | |
| Switching Characteristics | ||||||
| Turn-on delay time | td(on) | VDD=400V, ID=5.3A, RG=20 (note4,5) | - | 26 | - | ns |
| Rise time | tr | - | 60 | - | ns | |
| Turn-off delay time | td(off) | - | 75 | - | ns | |
| Fall time | tf | - | 44 | - | ns | |
| Total gate charge | Qg | VDS=480V, ID=11A, VGS=10V (note4,5) | - | 33 | - | nC |
| Gate-source charge | Qgs | - | 4 | - | nC | |
| Gate-drain charge | Qg d | - | 4.2 | - | nC | |
| Drain-Source Diode Characteristics and Maximum Ratings | ||||||
| Drain-source diode forward voltage | VSD | VGS=0V, ISD=11A | - | - | 1.5 | V |
| Continuous drain-source current | IS | - | - | 4.9 | A | |
| Pulsed drain-source current | ISM | - | - | 30 | A | |
| Reverse recovery time | trr | VGS=0V, ISD=4.9A, dlF/dt=100A/s (note4) | - | 270 | - | ns |
| Reverse recovery charge | Qrr | - | 3.3 | - | C | |
2410121331_KIA-Semicon-Tech-KIA65R420FS_C135554.pdf
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