KIA Semicon Tech KPD3204B Low RDS ON P Channel MOSFET Designed for Power Management Applications
Key Attributes
Model Number:
KPD3204B
Product Custom Attributes
Drain To Source Voltage:
40V
Current - Continuous Drain(Id):
100A
Operating Temperature -:
-55℃~+175℃
RDS(on):
3.8mΩ@10V
Gate Threshold Voltage (Vgs(th)):
2.5V@250uA
Reverse Transfer Capacitance (Crss@Vds):
440pF
Number:
1 P-Channel
Output Capacitance(Coss):
650pF
Input Capacitance(Ciss):
6.76nF
Pd - Power Dissipation:
83W
Gate Charge(Qg):
115nC@10V
Mfr. Part #:
KPD3204B
Package:
TO-252
Product Description
Product Overview
The KIA SEMICONDUCTORS KPD3204B is a -100A, -40V P-CHANNEL MOSFET designed for high-performance applications. It features super low gate charge, 100% EAS guaranteed, and excellent CdV/dt effect decline due to its advanced high cell density Trench technology. This device offers a low RDS(ON) of 3.2m (typ.) at VGS=-10V, making it suitable for demanding power management tasks.
Product Attributes
- Brand: KIA SEMICONDUCTORS
- Part Number: KPD3204B
- Package: TO-252
- Certifications: Green Device Available
Technical Specifications
| Parameter | Symbol | Condition | Min | Typ | Max | Unit |
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V, ID=-250A | -40 | - | - | V |
| BVDSS Temperature Coefficient | BVDSS /TJ | Reference to 25C, ID=-1mA | - | -0.023 | - | V/C |
| Zero Gate Voltage Drain Current | IDSS | VDS=-40V, VGS=0V, TJ=25C | - | - | -1 | A |
| Zero Gate Voltage Drain Current | IDSS | VDS=-40V, VGS=0V, TJ=55C | - | - | -5 | uA |
| Gate-Body Leakage Current | IGSS | VGS=20V, VDS=0V | - | - | 100 | nA |
| Forward Transconductance | gfs | VDS=-15V,ID=-18A | - | 50 | - | S |
| Gate Resistance | Rg | VDS=0V, VGS=0V, f=1MHz | - | 7 | 14 | |
| Gate Threshold Voltage | VGS(TH) | VDS=VGS, ID=-250A | -1.2 | -1.8 | -2.5 | V |
| VGS(th) Temperature Coefficient | VGS(TH) | VDS=VGS, ID=-250A | - | 4.74 | - | mV/C |
| Drain-Source On-State Resistance | RDS(ON) | VGS=-10V, ID=-20A | - | 3.2 | 3.8 | m |
| Drain-Source On-State Resistance | RDS(ON) | VGS=-4.5V, ID=-20A | - | 4.5 | 5.6 | m |
| Input Capacitance | Ciss | VDS=-20V, VGS=0V, f=1MHz | - | 6760 | - | pF |
| Output Capacitance | Coss | VDS=-20V, VGS=0V, f=1MHz | - | 650 | - | pF |
| Reverse Transfer Capacitance | Crss | VDS=-20V, VGS=0V, f=1MHz | - | 440 | - | pF |
| Total Gate Charge | Qg | VDS=-20V, ID=-8A, VGS=-10V | - | 115 | - | nC |
| Gate Source Charge | Qgs | VDS=-20V, ID=-8A, VGS=-10V | - | 10 | - | nC |
| Gate Drain Charge | Qgd | VDS=-20V, ID=-8A, VGS=-10V | - | 20 | - | nC |
| Turn-on Delay Time | td(on) | VDD=-20V, ID=-10A, RG=1.6, VGS=-10V | - | 15 | - | nS |
| Turn-on Rise Time | tr | VDD=-20V, ID=-10A, RG=1.6, VGS=-10V | - | 16 | - | nS |
| Turn-Off Delay Time | td(off) | VDD=-20V, ID=-10A, RG=1.6, VGS=-10V | - | 70 | - | nS |
| Turn-Off Fall Time | tf | VDD=-20V, ID=-10A, RG=1.6, VGS=-10V | - | 30 | - | nS |
| Continuous Source Current | IS | VG=VD=0V, Force Current | - | - | -100 | A |
| Forward on voltage | VSD | IS=-1A, VGS=0V, TJ=25C | - | - | -1.2 | V |
| Reverse Recovery Time | trr | IF=-15A, TJ=25C, dI/dt=100A/s | - | 28 | - | nS |
| Reverse Recovery Charge | Qrr | IF=-15A, TJ=25C, dI/dt=100A/s | - | 16 | - | nC |
| Parameter | Symbol | Rating | Unit |
| Drain-Source Breakdown Voltage | VD | -40 | V |
| Gate-Source Voltage | VGS | 20 | V |
| Continuous Drain Current , VGS @ -10V | ID | -100 (TC=25C) | A |
| Continuous Drain Current , VGS @ -10V | ID | -77 (TC=100C) | A |
| Continuous Drain Current | ID | -18 (TA=25C) | A |
| Continuous Drain Current | ID | -15 (TA=70C) | A |
| Pulse Drain Current Tested | IDM | -300 | A |
| Single Pulse Avalanche Energy | EAS | 361 | mJ |
| Avalanche Current | IAS | -85 | A |
| Maximum Power Dissipation | PD | 83 (TC=25C) | W |
| Maximum Power Dissipation | PD | 42 (TC=100C) | W |
| Maximum Power Dissipation | PD | 2.4 (TA=25C) | W |
| Maximum Power Dissipation | PD | 1.7 (TA=70C) | W |
| Operating Junction and Storage Temperature Range | TJ,TSTG | -55 to 175 | C |
| Parameter | Symbol | Value | Unit |
| Thermal Resistance, Junction-to-Ambient | RJA | 62 | C/W |
| Thermal Resistance, Junction-to-Case | RJC | 1.8 | C/W |
2411121110_KIA-Semicon-Tech-KPD3204B_C41369559.pdf
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