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quality Silicon Power IGBT KIA Semicon Tech KGM75N120AI 75A 1200V Suitable for UPS and Energy Storage Systems factory
quality Silicon Power IGBT KIA Semicon Tech KGM75N120AI 75A 1200V Suitable for UPS and Energy Storage Systems factory
quality Silicon Power IGBT KIA Semicon Tech KGM75N120AI 75A 1200V Suitable for UPS and Energy Storage Systems factory
quality Silicon Power IGBT KIA Semicon Tech KGM75N120AI 75A 1200V Suitable for UPS and Energy Storage Systems factory

Silicon Power IGBT KIA Semicon Tech KGM75N120AI 75A 1200V Suitable for UPS and Energy Storage Systems

Key Attributes
Model Number: KGM75N120AI
Product Custom Attributes
Mfr. Part #:
KGM75N120AI
Package:
TO-247
Product Description

Product Overview

The KIA SEMICONDUCTORS 75N120AI is a 75A, 1200V Silicon Power IGBT designed for high-performance applications. It features a low VCE(sat) of 1.55V (typ.), fast switching capabilities, high ruggedness, and short-circuit rating. This IGBT is ideal for use in solar inverters, uninterrupted power supplies, industrial inductive heating, and energy storage systems.

Product Attributes

  • Brand: KIA
  • Part Number: KGM75N120AI
  • Package: TO-247

Technical Specifications

Parameter Symbol Value Unit Conditions
Features
VCE(sat) VCE(sat) 1.55 (typ.) V VGE=15V, Tvj=25C
Applications
Solar Inverters
Uninterrupted Power Supply
Industrial Inductive Heating
Energy Storage
Pin Configuration (TO-247)
Pin 1 G
Pin 2 C
Pin 3 E
Maximum Ratings
Collector-emitter voltage VCE 1200 V Tvj25C
DC collector current (limited by Tvjmax) IC 155 A TC=25C
DC collector current (limited by Tvjmax) IC 100 A TC=100C
Pulsed collector current (tp limited by Tvjmax) ICpuls 300 A
Diode forward current (limited by Tvjmax) IF 112 A TC=25C
Diode forward current (limited by Tvjmax) IF 75 A TC=100C
Diode pulsed current (tp limited by Tvjmax) IFpuls 300 A
Gate-emitter voltage VGE 20 V
Transient Gate-emitter voltage VGE 30 V
Short circuit withstand time tSC TBD s VGE=15.0V, VCC400V, Tvj=150C
Power dissipation Ptot 625 W TC=25C
Operating junction temperature Tvj(0P) -40 to +175 C
Storage temperature Tstg -40 to +150 C
Soldering temperature (wave soldering, 1.6mm from case for 10s) 260 C
Mounting torque (M3 screw) Maximum of 3 Nm
Thermal Characteristics
IGBT Thermal Resistance, Junction-Case R(J-C) 0.24 C/W
Diode Thermal Resistance, Junction-Case R(J-C) 0.45 C/W
Thermal Resistance, Junction-to-Ambient R(J-A) 40 C/W
Electrical Characteristics (Tvj=25C, unless otherwise specified)
Collector-emitter breakdown voltage V(BR)CES 1200 V VGE=0V, IC=250A
Collector-emitter breakdown voltage V(BR)CES 1200 V VGE=0V, IC=1mA
Collector-emitter saturation voltage VCEsat 1.55 (Typ.), 1.9 (Max.) V VGE=15V, IC=75A, Tvj=25C
Collector-emitter saturation voltage VCEsat 2.0 (Typ.) V VGE=15V, IC=75A, Tvj=175C
Diode forward voltage VF 2.44 (Typ.), 2.9 (Max.) V VGE=0V, IF=75A, Tvj=25C
Diode forward voltage VF 2.1 (Typ.) V VGE=0V, IF=75A, Tvj=175C
Gate-emitter threshold voltage VGE(th) 4.2 (Min.), 5.2 (Typ.), 6.2 (Max.) V VCE=VGE, IC=250A
Zero gate voltage collector current ICES 10 (Max.) uA VCE=1200V, VGE=0V, Tvj=25C
Zero gate voltage collector current ICES 5000 (Max.) uA VCE=1200V, VGE=0V, Tvj=175C
Gate-emitter leakage current IGES 100 (Max.) nA VCE=0V, VGE=20V
Transconductance gfs TBC S VCE=20V, IC=75A
Dynamic Characteristic (Tvj=25C, unless otherwise specified)
Input capacitance Cies 8200 (Typ.) pF VCE=30V, VGE=0V, f=1MHZ
Output capacitance Coes 260 (Typ.) pF
Reverse transfer capacitance Cres 150 (Typ.) pF
Gate charge QG 402 (Typ.) nC VCC=600V, IC=75A, VGE=15V
IGBT Characteristic, at Tvj=25C
Turn-on delay time td(on) 50 (Typ.) nS VCC=400V, IC=60A, VGE=0.0/15V, Rg=4
Rise time tr 45 (Typ.) nS
Turn-off delay time td(off) 400 (Typ.) nS
Fall time tf 65 (Typ.) nS
Turn-on energy Eon 5.2 (Typ.) mJ
Turn-off energy Eoff 2.2 (Typ.) mJ
Total switching energy Ets 7.5 (Typ.) mJ
Diode Characteristics
Diode reverse recovery time trr 170 (Typ.) nS IF=40A, VR=300V, di/dt= 600A/s
Diode reverse recovery charge Qrr 3.2 (Typ.) C
Diode peak reverse recovery current Irrm 45 (Typ.) A
Diode peak rate of fall of reverse recovery current during tb dirr/dt TBC A/s

2411121110_KIA-Semicon-Tech-KGM75N120AI_C41369540.pdf

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