IGBT module KTP IKW40N65H2-KTP 650V 40A featuring CoolWatt II trench FS technology for power switching
Key Attributes
Model Number:
IKW40N65H2-KTP
Product Custom Attributes
Pd - Power Dissipation:
333W
Td(off):
587ns
Td(on):
108ns
Collector-Emitter Breakdown Voltage (Vces):
650V
Gate-Emitter Threshold Voltage (Vge(th)@Ic):
5.5V@1.5mA
Gate Charge(Qg):
266nC@40A,15V
Operating Temperature:
-40℃~+175℃
Reverse Recovery Time(trr):
129ns
Switching Energy(Eoff):
1.23mJ
Turn-On Energy (Eon):
1.36mJ
Mfr. Part #:
IKW40N65H2-KTP
Package:
TO-247
Product Description
Product Overview
The 40N65H2 is a 650V, 40A IGBT discrete utilizing CoolWatt@II Trench-FS technology, offering high-speed soft switching. It features a low Vcesat, high junction temperature capability, and robust construction. This IGBT is ideal for applications requiring high switching frequencies, including Power, PV, Industrial welding, and PFC systems. It includes an integrated anti-parallel fast recovery diode.
Product Attributes
- Brand: KTP Semiconductor
- Part ID: 40N65H2
- Package: TO-247
Technical Specifications
| Symbol | Parameter | Condition | Value | Unit | |
| Maximum Rated Values | |||||
| VCES | Collector-emitter voltage | Tvj=25 | 650 | V | |
| IC | DC collector current | TC = 25 | 80 | A | |
| IC | DC collector current | TC =100 | 40 | A | |
| ICpuls | Pulse collector current | Tvj150 | 120 | A | |
| VRRM | Repetitive peak reverse voltage | Tvj=25 | 650 | V | |
| IF | Diode continuous forward current | TC = 25 | 80 | A | |
| IF | Diode continuous forward current | TC = 100 | 40 | A | |
| IFpuls | Diode pulse current | Tvj150 | 120 | A | |
| VGE | Gate-emitter voltage | Tvj=25 | 20 | V | |
| VGE | Gate-emitter voltage | Transienttp10uS,D0.01 | 30 | V | |
| Ptot | Power dissipation | TC = 25 | 333 | W | |
| Tvj | Operating junction temperature | -40~+175 | |||
| Tstg | Storage temperature | -50~ +150 | |||
| M | Mounting torque | M3 | 0.6 | Nm | |
| Thermal Characteristic | |||||
| RthJC-IGBT | IGBT thermal resistance junction-case | 0.45 | K/W | ||
| RthJC-FRD | FRD thermal resistance junction-case | 1.30 | K/W | ||
| RthJA | Thermal resistance junction-ambient | 40 | K/W | ||
| Electrical Characteristic | |||||
| V(BR)CES | Collector-emitter breakdown voltage | VGE = 0V, IC=0.25mA,Tvj=25 | 650 | V | |
| VCE(sat) | Collector-emitter saturation voltage | VGE=15V, IC=40A, Tvj=25 | 1.45 | V | |
| VCE(sat) | Collector-emitter saturation voltage | VGE=15V, IC=40A, Tvj=150 | 1.80 | V | |
| VGE(th) | Gate-emitter threshold voltage | VGE= VCE,IC=1.5mA,Tvj=25 | 5.50 | 6.50 | V |
| VF | Diode forward voltage | VGE= 0V,IF=40A, Tvj=25 | 1.60 | V | |
| VF | Diode forward voltage | VGE= 0V,IF=40A, Tvj=150 | 1.45 | V | |
| IGES | Zero collector voltage gate current | VGE=30V,VCE=0V | 200 | nA | |
| ICES | Zero gate voltage collector current | VCE =650V,VGE=0V, Tvj=25 | 0.25 | mA | |
| ICES | Zero gate voltage collector current | VCE =650V,VGE=0V, Tvj=150 | 0.50 | mA | |
| RGin | Integrated gate resistor | 0 | |||
| Cies | Input capacitance | VGE = 0V,VCE= 30V, = 1MHz, Tvj=25 | 6080 | pF | |
| Coes | Output capacitance | VGE = 0V,VCE= 30V, = 1MHz, Tvj=25 | 167 | pF | |
| Cres | Reverse transfer capacitance | VGE = 0V,VCE= 30V, = 1MHz, Tvj=25 | 97.3 | pF | |
| Qg | Gate charge | VGE=0/15V,Vcc=520V,IC=40A, Tvj=25 | 266 | nC | |
| Qge | Gate-emitter charge | VGE=0/15V,Vcc=520V,IC=40A, Tvj=25 | 39.9 | nC | |
| Qgc | Gate-collector charge | VGE=0/15V,Vcc=520V,IC=40A, Tvj=25 | 125 | nC | |
| VGE(pl) | Gate-emitter plateau voltage | IC =40A,VCE=520V, VGE=0/15V,Tvj=25 | 8.2 | V | |
| Dynamic CharacteristicWith inductive load | |||||
| IGBT Characteristic_25 | |||||
| Td(on) | Turn-on delay time | Vcc=400V,Ic=40A, Ron=20, Roff=20, Cge=0nF,VGE=0/15V, Lload=100uH,Tvj=25 | 108 | ns | |
| Tr | Rise time | Vcc=400V,Ic=40A, Ron=20, Roff=20, Cge=0nF,VGE=0/15V, Lload=100uH,Tvj=25 | 73.1 | ns | |
| Td(off) | Turn-off delay time | Vcc=400V,Ic=40A, Ron=20, Roff=20, Cge=0nF,VGE=0/15V, Lload=100uH,Tvj=25 | 587 | ns | |
| tf | Fall time | Vcc=400V,Ic=40A, Ron=20, Roff=20, Cge=0nF,VGE=0/15V, Lload=100uH,Tvj=25 | 37.4 | ns | |
| Eon | Turn-on energy | Vcc=400V,Ic=40A, Ron=20, Roff=20, Cge=0nF,VGE=0/15V, Lload=100uH,Tvj=25 | 1.36 | mJ | |
| Eoff | Turn-off energy | Vcc=400V,Ic=40A, Ron=20, Roff=20, Cge=0nF,VGE=0/15V, Lload=100uH,Tvj=25 | 1.23 | mJ | |
| Etotal | Total switch energy | Vcc=400V,Ic=40A, Ron=20, Roff=20, Cge=0nF,VGE=0/15V, Lload=100uH,Tvj=25 | 2.59 | mJ | |
| IGBT Characteristic_150 | |||||
| Td(on) | Turn-on delay time | Vcc=400V,Ic=40A, Ron=20, Roff=20, Cge=0nF,VGE=0/15V, Lload=100uH,Tvj=150 | 93.1 | ns | |
| Tr | Rise time | Vcc=400V,Ic=40A, Ron=20, Roff=20, Cge=0nF,VGE=0/15V, Lload=100uH,Tvj=150 | 76.1 | ns | |
| Td(off) | Turn-off delay time | Vcc=400V,Ic=40A, Ron=20, Roff=20, Cge=0nF,VGE=0/15V, Lload=100uH,Tvj=150 | 649 | ns | |
| tf | Fall time | Vcc=400V,Ic=40A, Ron=20, Roff=20, Cge=0nF,VGE=0/15V, Lload=100uH,Tvj=150 | 36.6 | ns | |
| Eon | Turn-on energy | Vcc=400V,Ic=40A, Ron=20, Roff=20, Cge=0nF,VGE=0/15V, Lload=100uH,Tvj=150 | 2.17 | mJ | |
| Eoff | Turn-off energy | Vcc=400V,Ic=40A, Ron=20, Roff=20, Cge=0nF,VGE=0/15V, Lload=100uH,Tvj=150 | 1.41 | mJ | |
| Etotal | Total switch energy | Vcc=400V,Ic=40A, Ron=20, Roff=20, Cge=0nF,VGE=0/15V, Lload=100uH,Tvj=150 | 3.58 | mJ | |
| Diode Characteristic_25 | |||||
| Erec | Reverse recovery energy | IF =40A,VR=400V, VGE =0/15V,RON=20,Tvj=25 | 264 | uJ | |
| trr | Diode reverse recovery time | IF =40A,VR=400V, VGE =0/15V,RON=20,Tvj=25 | 129 | nS | |
| Qrr | Diode reverse recovery charge | IF =40A,VR=400V, VGE =0/15V,RON=20,Tvj=25 | 945 | nC | |
| Irrm | Diode peak reverse recovery current | IF =40A,VR=400V, VGE =0/15V,RON=20,Tvj=25 | 12.8 | A | |
| dirr/dt | Diode peak rate of fall of reverse Recovery current during trr | IF =40A,VR=400V, VGE =0/15V,RON=20,Tvj=25 | 116 | A/uS | |
| Diode Characteristic_150 | |||||
| Erec | Reverse recovery energy | IF=40A,VR=400V,VGE=0/15V, RON=20,Tvj=150 | 819 | uJ | |
| trr | Diode reverse recovery time | IF=40A,VR=400V,VGE=0/15V, RON=20,Tvj=150 | 282 | nS | |
| Qrr | Diode reverse recovery charge | IF=40A,VR=400V,VGE=0/15V, RON=20,Tvj=150 | 3072 | nC | |
| Irrm | Diode peak reverse recovery current | IF=40A,VR=400V,VGE=0/15V, RON=20,Tvj=150 | 25.6 | A | |
| dirr/dt | Diode peak rate of fall of reverse Recovery current during trr | IF=40A,VR=400V,VGE=0/15V, RON=20,Tvj=150 | 192 | A/uS | |
2504181735_KTP-IKW40N65H2-KTP_C48392930.pdf
Related Products
High surge current fast recovery rectifier diode ZHIDE MURS220 with plastic molded epoxy UL 94V 0 flame retardant
Product OverviewThe MURS220-MURS2100 series are plastic encapsulated epitaxial fast recovery rectifier diodes designed for high-reliability applications. They feature low reverse leakage, high forward surge capability, and are guaranteed for high-temperature soldering (260/10 seconds). The ...
power switching device XCH XCH6003 trenched N channel MOSFET with low gate charge and fast switching
Product OverviewThe XCH6003 is a high cell density trenched N-channel MOSFET designed for efficient power switching applications. It offers excellent RDS(ON) and efficiency, making it suitable for most low-power switching and load switch applications. This device features super low gate charge and ...
Small Signal Zener Diodes Including YANGJIE BZX584C3V9Q for General Purpose Voltage Regulation
Small Signal Zener DiodesThe BZX584C2V4Q thru BZX584C47VQ series are small signal Zener diodes designed for general regulation functions. These diodes feature an epoxy casing that meets UL-94 V-0 flammability rating and is halogen-free. They are moisture sensitivity level 1 and AEC-Q101 qualified ...
Planar die Zener diode XZT BZT52B9V1S designed for medium current applications and automated assembly
Product OverviewThe BZT52B2V4S thru BZT52B43S series are Zener diodes designed for general purpose, medium current applications. They are ideally suited for automated assembly processes and are available in a lead-free version. These diodes feature a planar die construction.Product AttributesBrand: ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
