Surface Mount Schottky Rectifier JUXING SS210F with High Forward Surge Current and Low Forward Voltage
Key Attributes
Model Number:
SS210F
Product Custom Attributes
Non-Repetitive Peak Forward Surge Current:
40A
Reverse Leakage Current (Ir):
300uA@100V
Operating Junction Temperature Range:
-55℃~+125℃
Diode Configuration:
Independent
Voltage - DC Reverse (Vr) (Max):
100V
Voltage - Forward(Vf@If):
850mV@2A
Current - Rectified:
2A
Mfr. Part #:
SS210F
Package:
SMAF
Product Description
Product Overview
Surface Mount Schottky Rectifiers designed for high-efficiency, low-power loss applications. Featuring metal silicon junction and majority carrier conduction, these rectifiers offer high forward surge current capability, making them ideal for low voltage, high frequency inverters, free-wheeling, and polarity protection.
Product Attributes
- Marking Code: SS22 SS220
- Case: SMAF
- Terminals: Solderable per MIL-STD-750, Method 2026
- Approx. Weight: 27mg (0.00086oz)
- Origin: Not specified
- Material: Metal silicon junction
- Color: Not specified
- Certifications: Not specified
Technical Specifications
| Model | Max DC Blocking Voltage (V) | Max Repetitive Peak Reverse Voltage (VRRM) (V) | Max RMS Voltage (VRMS) (V) | Max Average Forward Rectified Current (IF(AV)) (A) | Peak Forward Surge Current (IFSM) (A) | Max Instantaneous Forward Voltage (VF) (V) | Typical Junction Capacitance (Cj) (pF) | Max DC Reverse Current (IR) (mA) | Operating Junction Temperature Range (C) | Storage Temperature Range (C) |
| SS22F | 20 | 20 | 14 | 2.0 | 20 | 0.55 | 70 | 0.3 (at 125C) | -55 ~ +125 | -55 ~ +150 |
| SS24F | 40 | 40 | 28 | 2.0 | 40 | 0.70 | 70 | 0.5 (at 25C) | -55 ~ +125 | -55 ~ +150 |
| SS26F | 60 | 60 | 42 | 2.0 | 60 | 0.85 | 70 | 0.5 (at 25C) | -55 ~ +125 | -55 ~ +150 |
| SS28F | 80 | 80 | 56 | 2.0 | 80 | 0.85 | 70 | 0.5 (at 25C) | -55 ~ +125 | -55 ~ +150 |
| SS210F | 100 | 100 | 70 | 2.0 | 100 | 0.95 | 70 | 0.5 (at 25C) | -55 ~ +125 | -55 ~ +150 |
| SS212F | 120 | 120 | 84 | 2.0 | 120 | 0.95 | 70 | 0.5 (at 25C) | -55 ~ +125 | -55 ~ +150 |
| SS215F | 150 | 150 | 105 | 2.0 | 150 | 0.95 | 70 | 0.5 (at 25C) | -55 ~ +125 | -55 ~ +150 |
| SS220F | 200 | 200 | 140 | 2.0 | 200 | 0.95 | 70 | 0.5 (at 25C) | -55 ~ +125 | -55 ~ +150 |
2410010102_JUXING-SS210F_C3011112.pdf
Related Products
NPN transistor YTL MMBTH10 with 30V collector base breakdown voltage and 650MHz transition frequency
Product OverviewThe MMBTH10 is an NPN transistor in a SOT-23 package, designed for general-purpose applications. It offers a breakdown voltage of 30V (V(BR)CBO) and 25V (V(BR)CEO), with a DC current gain (hFE) of 60 at 10V VCE and 4mA IC. Its low collector-emitter saturation voltage (VCE(sat)) of 0...
Switching amplifier NPN transistor YONGYUTAI 2N3904 epitaxial planar type with 100 milliamps collector current rating
Product OverviewNPN silicon epitaxial planar transistor designed for switching and amplifier applications. It is recommended as a complementary type to the PNP transistor 2N3906. This transistor is also available in the SOT-23 case under the type designation MMBT3904.Product AttributesBrand: Not ...
Surface mount ZHIDE ES5D rectifier with low leakage current and 100 volt maximum DC blocking voltage
Product OverviewThe ES5A-ES5M series are surface mount super fast recovery rectifiers designed for high-speed switching applications. They offer low reverse leakage, high forward surge capability, and high reliability, with guaranteed high-temperature soldering. These rectifiers are RoHS compliant ...
Gallium Nitride Gan Hemts for Broadband Rf Applications Featuring Wolfspeed CGHV40050P Transistor
Product Overview The MACOM CGHV40050 is an unmatched Gallium Nitride (GaN) High Electron Mobility Transistor (HEMT) designed for general-purpose, broadband RF and microwave applications up to 4 GHz. Operating from a 50-volt rail, this device offers high efficiency, high gain, and wide bandwidth ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
