Silicon Planar Zener Diode JUXING BZX55C15V Featuring Glass Case DO35 for Voltage Reference Circuits
Key Attributes
Model Number:
BZX55C15V
Product Custom Attributes
Impedance(Zzt):
30Ω
Diode Configuration:
Independent
Zener Voltage(Range):
13.8V~15.6V
Pd - Power Dissipation:
500mW
Zener Voltage(Nom):
15V
Mfr. Part #:
BZX55C15V
Package:
DO-35
Product Description
Product Overview
Silicon Planar Zener Diodes. The Zener voltages are graded according to the international E24 standard. Other tolerances and higher Zener voltages are upon request.
Product Attributes
- Brand: BZX55C
- Material: Silicon Planar
- Package: Glass Case DO-35
- Origin: http://www.trr-jx.com
- Version: 02
Technical Specifications
| Type | Zener Voltage Range (V) | VZT at IZT (V) | IZT (mA) | ZZT Max. () | ZZK at IZK Max. () | IZK (mA) | IR at VR Max. (A) | Temp. Coefficient of Zener Voltage TKvz (%/K) |
| BZX55C0V8 | 0.73...0.83 | 0.8 | 5 | 8 | 50 | 1 | - | -0.26...-0.23 |
| BZX55C2V0 | 1.8...2.15 | 2 | 5 | 85 | 600 | 1 | 100 | -0.09...-0.06 |
| BZX55C2V2 | 2.08...2.33 | 2.2 | 5 | 85 | 600 | 1 | 75 | -0.09...-0.06 |
| BZX55C2V4 | 2.28...2.56 | 2.4 | 5 | 85 | 600 | 1 | 50 | -0.09...-0.06 |
| BZX55C2V7 | 2.5...2.9 | 2.7 | 5 | 85 | 600 | 1 | 10 | -0.09...-0.06 |
| BZX55C3V0 | 2.8...3.2 | 3 | 5 | 85 | 600 | 1 | 4 | -0.08...-0.05 |
| BZX55C3V3 | 3.1...3.5 | 3.3 | 5 | 85 | 600 | 1 | 2 | -0.08...-0.05 |
| BZX55C3V6 | 3.4...3.8 | 3.6 | 5 | 85 | 600 | 1 | 2 | -0.08...-0.05 |
| BZX55C3V9 | 3.7...4.1 | 3.9 | 5 | 85 | 600 | 1 | 2 | -0.08...-0.05 |
| BZX55C4V3 | 4...4.6 | 4.3 | 5 | 75 | 600 | 1 | 1 | -0.06...-0.03 |
| BZX55C4V7 | 4.4...5 | 4.7 | 5 | 60 | 600 | 1 | 0.5 | -0.05...+0.02 |
| BZX55C5V1 | 4.8...5.4 | 5.1 | 5 | 35 | 550 | 1 | 0.1 | -0.02...+0.02 |
| BZX55C5V6 | 5.2...6 | 5.6 | 5 | 25 | 450 | 1 | 0.1 | -0.05...+0.05 |
| BZX55C6V2 | 5.8...6.6 | 6.2 | 5 | 10 | 200 | 1 | 0.1 | 0.03...0.06 |
| BZX55C6V8 | 6.4...7.2 | 6.8 | 5 | 8 | 150 | 1 | 0.1 | 0.03...0.07 |
| BZX55C7V5 | 7...7.9 | 7.5 | 5 | 7 | 50 | 1 | 0.1 | 0.03...0.07 |
| BZX55C8V2 | 7.7...8.7 | 8.2 | 5 | 7 | 50 | 1 | 0.1 | 0.03...0.08 |
| BZX55C9V1 | 8.5...9.6 | 9.1 | 5 | 10 | 50 | 1 | 0.1 | 0.03...0.09 |
| BZX55C10 | 9.4...10.6 | 10 | 5 | 15 | 70 | 1 | 0.1 | 0.03...0.1 |
| BZX55C11 | 10.4...11.6 | 11 | 5 | 20 | 70 | 1 | 0.1 | 0.03...0.11 |
| BZX55C12 | 11.4...12.7 | 12 | 5 | 20 | 90 | 1 | 0.1 | 0.03...0.11 |
| BZX55C13 | 12.4...14.1 | 13 | 5 | 26 | 110 | 1 | 0.1 | 0.03...0.11 |
| BZX55C15 | 13.8...15.6 | 15 | 5 | 30 | 110 | 1 | 0.1 | 0.03...0.11 |
| BZX55C16 | 15.3...17.1 | 16 | 5 | 40 | 170 | 1 | 0.1 | 0.03...0.11 |
| BZX55C18 | 16.8...19.1 | 18 | 5 | 50 | 170 | 1 | 0.1 | 0.03...0.11 |
| BZX55C20 | 18.8...21.2 | 20 | 5 | 55 | 220 | 1 | 0.1 | 0.03...0.11 |
| BZX55C22 | 20.8...23.3 | 22 | 5 | 55 | 220 | 1 | 0.1 | 0.04...0.12 |
| BZX55C24 | 22.8...25.6 | 24 | 5 | 80 | 220 | 1 | 0.1 | 0.04...0.12 |
| BZX55C27 | 25.1...28.9 | 27 | 5 | 80 | 220 | 1 | 0.1 | 0.04...0.12 |
| BZX55C30 | 28...32 | 30 | 5 | 80 | 220 | 1 | 0.1 | 0.04...0.12 |
| BZX55C33 | 31...35 | 33 | 5 | 80 | 220 | 1 | 0.1 | 0.04...0.12 |
| BZX55C36 | 34...38 | 36 | 5 | 80 | 220 | 1 | 0.1 | 0.04...0.12 |
| BZX55C39 | 37...41 | 39 | 2.5 | 90 | 500 | 0.5 | 0.1 | 0.04...0.12 |
| BZX55C43 | 40...46 | 43 | 2.5 | 90 | 500 | 0.5 | 0.1 | 0.04...0.12 |
| BZX55C47 | 44...50 | 47 | 2.5 | 110 | 600 | 0.5 | 0.1 | 0.04...0.12 |
| BZX55C51 | 48...54 | 51 | 2.5 | 125 | 700 | 0.5 | 0.1 | 0.04...0.12 |
| BZX55C56 | 52...60 | 56 | 2.5 | 135 | 700 | 0.5 | 0.1 | 0.04...0.12 |
| BZX55C62 | 58...66 | 62 | 2.5 | 150 | 1000 | 0.5 | 0.1 | 0.04...0.12 |
| BZX55C68 | 64...72 | 68 | 2.5 | 200 | 1000 | 0.5 | 0.1 | 0.04...0.12 |
| BZX55C75 | 70...79 | 75 | 2.5 | 250 | 1000 | 0.5 | 0.1 | 0.04...0.12 |
Absolute Maximum Ratings
| Parameter | Symbol | Value | Unit |
| Power Dissipation | Ptot | 500 1) | mW |
| Junction Temperature | Tj | 175 | C |
| Storage Temperature Range | Tstg | -55 to +175 | C |
Characteristics
| Parameter | Symbol | Value | Unit |
| Thermal Resistance Junction to Ambient Air | RthA | 0.3 1) | K/mW |
| Forward Voltage at IF = 100 mA | VF | 1 | V |
1) Valid provided that leads are kept at ambient temperature at a distance of 8 mm from case.
2) The BZX55C0V8 is a silicon diode with operation in forward direction. Hence, the index of all parameters should be "F" instead of "Z". Connect the cathode lead to the negative pole.
2512051420_JUXING-BZX55C15V_C5365410.pdf
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