load switching MOSFET JUXING SI2301 featuring trench design suitable for portable and DC DC devices

Key Attributes
Model Number: SI2301
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
2.3A
Operating Temperature -:
-50℃~+150℃
RDS(on):
112mΩ@4.5V,2.8A
Gate Threshold Voltage (Vgs(th)):
400mV
Reverse Transfer Capacitance (Crss@Vds):
55pF
Number:
1 P-Channel
Input Capacitance(Ciss):
405pF
Pd - Power Dissipation:
400mW
Gate Charge(Qg):
10nC@4.5V
Mfr. Part #:
SI2301
Package:
SOT-23
Product Description

Product Description

The SI2301 is a TrenchFET Power MOSFET designed for load switching in portable devices and DC/DC converters. It offers low on-resistance and is suitable for various applications requiring efficient power management.

Product Attributes

  • Package: SOT-23
  • Flammability Rating: Epoxy UL 94V-0
  • Mounting Position: Any
  • Origin: Not specified
  • Material: Not specified
  • Color: Not specified

Technical Specifications

ParameterSymbolTest ConditionMinTypMaxUnit
Drain-Source On-ResistanceRDS(ON)VGS=-4.5V, ID=-2.8A90112m
VGS=-2.5V, ID=-2A110142
VGS=-4.5V, ID=-3A5.510
Gate-Threshold voltageVGS(th)VDS=VGS, ID=-250uA-0.4-0.7-1.0V
Gate-body LeakageIGSSVDS=0V, VGS=8V100nA
Zero Gate Voltage Drain currentIDSSVDS=-20V, VGS=0V-1uA
Forward trans conductancegfsVDS=-5V, ID=-2.8A6.5S
Input capacitanceCissVDS=-10V, VGS=0V,f=1MHz405pF
Output capacitanceCoss
Reverse Transfer capacitanceCrss
Total gate chargeQgVDS=-10V, VGS=-4.5V,ID=-3A3.36nC
Gate-source chargeQgs0.7
Gate-drain chargeQgdVDS=-10V, VGS=-2.5V,ID=-3A1.3
Gate resistanceRgF=1MHz6.0
Turn-on Timetd(on)VDD=-10V, RL=10, VGEN=-4.5V, ID=-1A, RG=11120ns
Rise timetr3560
Turn-off Timetd(off)3050
Fall timetf1020
Continuous source-drain diode currentISTc=25-0.72A
Pulse diode forward currentISM-10A
Body diode voltageVSDIS=-0.7A-0.8-1.2V

2411220257_JUXING-SI2301_C5243892.pdf

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