Low RDS on P Channel MOSFET JUXING AO3407 with High Power Dissipation and Continuous Drain Current
Product Overview
The AO3407 is a P-CHANNEL ENHANCEMENT MOSFET designed for high-density cell applications, offering extremely low RDS(on) and exceptional on-resistance and maximum DC current capability. It is suitable for load/power switching and interfacing switching applications.
Product Attributes
- Package: SOT-23
- Epoxy UL Flammability Rating: 94V-0
- Mounting Position: Any
Technical Specifications
| Parameters | Symbol | Test Condition | Min | Typ | Max | Unit |
| Maximum Ratings & Thermal Characteristics | ||||||
| Drain-Source Voltage | VDS | -30 | V | |||
| Gate-Source Voltage | VGS | ±20 | V | |||
| Continuous Drain Current | ID | -4.1 | A | |||
| Power Dissipation | PD | 350 | mW | |||
| Junction Temperature | Tj | 150 | ||||
| Storage Temperature | Tstg | -50 | +150 | |||
| Thermal Resistance From Junction to Ambient (note 2) | RθJA | 357 | /W | |||
| Electrical Characteristics | ||||||
| Off characteristics | ||||||
| Drain-Source Breakdown Voltage | V(BR)DSS | VGS=0V, ID=-250uA | -30 | V | ||
| Zero Gate Voltage Drain current | IDSS | VDS=-24V, VGS=0V | -1 | uA | ||
| Gate-body Leakage | IGSS | VDS=±20V, VDS=0V | ±100 | nA | ||
| On characteristics | ||||||
| Drain-Source On-Resistance (note 1) | RDS(ON) | VGS=-10V, ID=-4.1A | 50 | 60 | mΩ | |
| VGS=-4.5V, ID=-3A | 68 | 87 | mΩ | |||
| Forward trans conductance | gfs | VDS=-5V, ID=-4A | 5.5 | S | ||
| Gate-Threshold voltage* | VGS (th) | VDS=VGS, ID=-250uA | -1.0 | -1.4 | -3.0 | V |
| Dynamic characteristics (note 2) | ||||||
| Input capacitance | Ciss | VDS=-15V, VGS=0V,f=1MHz | 700 | pF | ||
| Output capacitance | Coss | 120 | pF | |||
| Reverse Transfer capacitance | Crss | 75 | pF | |||
| Switching characteristics (note 2) | ||||||
| Turn-on Time | td(on) | VGS=-10V, RL=3.6Ω, VDS=-15V, RGEN=3Ω | 8.6 | ns | ||
| Rise time | tr | 5.0 | ns | |||
| Turn-off Time | td(off) | 28.2 | ns | |||
| Fall time | tf | 13.5 | ns | |||
| Drain-source diode characteristics and maximum ratings | ||||||
| Diode forward voltage(note 1) | VSD | IS=-1A, VGS=0V | -1.0 | V | ||
2411220257_JUXING-AO3407_C5279937.pdf
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