Switching diode KUU MBR10100DS optimized for loss and high surge current in polarity protection circuits
Key Attributes
Model Number:
MBR10100DS
Product Custom Attributes
Reverse Leakage Current (Ir):
1uA@100V
Reverse Recovery Time (trr):
-
Voltage - DC Reverse (Vr) (Max):
100V
Operating Junction Temperature Range:
-
Voltage - Forward(Vf@If):
700mV@3A
Current - Rectified:
10A
Mfr. Part #:
MBR10100DS
Package:
TO-252
Product Description
Product Overview
The MBR10100DS is a high-performance switching diode featuring a Schottky Barrier Chip with Guard Ring Die Construction for transient protection. It offers low power loss, high efficiency, and high surge and current capabilities with a low forward voltage drop. This diode is designed for use in low voltage, high frequency inverters, free-wheeling, and polarity protection applications.
Product Attributes
- Certifications: ROHS, Green Product
Technical Specifications
| Parameter | Symbol | Test Conditions | Value | Unit |
|---|---|---|---|---|
| Absolute Maximum Ratings | VRRM | TA=25C | 100 | V |
| VRWM | TA=25C | 100 | V | |
| VR | TA=25C | 100 | V | |
| VR(RMS) | TA=25C | 70 | V | |
| IO | TA=25C | 105*2 | A | |
| IFSM | 8.3ms half sine wave, TA=25C | 100*2 | A | |
| Tj | TA=25C | 175 | C | |
| Thermal Resistance | RJA | TO-252 | 110 | C/W |
| RJC | TO-252 | 6 | C/W | |
| Electrical Characteristics | V(BR) | IR=0.1mA | 100 | V |
| IR | VR=100V, TA=25C | 1 | uA | |
| VF1 | IF=3A, Tj=25 | 0.70 | V | |
| VF2 | IF=5A, Tj=25 | 0.77 | 0.82 | V |
| VF3 | IF=10A, Tj=25 | 0.95 | V |
2410221558_KUU-MBR10100DS_C41781633.pdf
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