Fast Switching and Ultra Low On Resistance P Channel MOSFET KEXIN IRLML6401 in Compact SOT 23 Package
Key Attributes
Model Number:
IRLML6401
Product Custom Attributes
Drain To Source Voltage:
12V
Current - Continuous Drain(Id):
4.3A
Operating Temperature -:
-55℃~+150℃
RDS(on):
85mΩ@1.8V
Gate Threshold Voltage (Vgs(th)):
950mV@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
125pF
Number:
1 P-Channel
Output Capacitance(Coss):
180pF
Input Capacitance(Ciss):
830pF
Pd - Power Dissipation:
1.3W
Gate Charge(Qg):
15nC@5.0V
Mfr. Part #:
IRLML6401
Package:
SOT-23
Product Description
Product Overview
The IRLML6401 (KRLML6401) is a P-Channel Enhancement MOSFET designed for high-performance applications. It features ultra-low on-resistance, fast switching capabilities, and is housed in a compact SOT-23 SMD package. This MOSFET is suitable for various electronic circuits requiring efficient power management.
Product Attributes
- Brand: Kexin (implied by URL)
- Origin: China (implied by URL)
- SMD Type: SOT-23
- Marking: 1F*
Technical Specifications
| Parameter | Symbol | Test Conditions | Min | Typ | Max | Unit |
| Drain-Source Breakdown Voltage | VDSS | ID=-250A, VGS=0V | -12 | V | ||
| Gate-Body leakage current | IGSS | VDS=0V, VGS=8V | 100 | nA | ||
| Gate Threshold Voltage | VGS(th) | VDS=VGS ID=-250A | -0.4 | -0.55 | -0.95 | V |
| Static Drain-Source On-Resistance | RDS(On) | VGS=-4.5V, ID=-4.3A | 50 | m | ||
| Static Drain-Source On-Resistance | RDS(On) | VGS=-2.5V, ID=-2.5A | 85 | m | ||
| Static Drain-Source On-Resistance | RDS(On) | VGS=-1.8V, ID=-2A | 125 | m | ||
| Forward Transconductance | gFS | VDS=-10V, ID=-4.3A | 8.6 | S | ||
| Input Capacitance | Ciss | VGS=0V, VDS=-10V, f=1MHz | 830 | pF | ||
| Output Capacitance | Coss | VGS=0V, VDS=-10V, f=1MHz | 180 | pF | ||
| Reverse Transfer Capacitance | Crss | VGS=0V, VDS=-10V, f=1MHz | 125 | pF | ||
| Total Gate Charge | Qg | VGS=-5.0V, VDS=-10V, ID=-4.3A | 10 | 15 | nC | |
| Gate Source Charge | Qgs | VGS=-5.0V, VDS=-10V, ID=-4.3A | 1.4 | 2.1 | nC | |
| Gate Drain Charge | Qg | VGS=-5.0V, VDS=-10V, ID=-4.3A | 2.6 | 3.9 | nC | |
| Turn-On Delay Time | td(on) | ID=-4.3A, VDS=-10V, RL=6,RGEN=89 | 11 | ns | ||
| Turn-On Rise Time | tr | ID=-4.3A, VDS=-10V, RL=6,RGEN=89 | 32 | ns | ||
| Turn-Off Delay Time | td(off) | ID=-4.3A, VDS=-10V, RL=6,RGEN=89 | 250 | ns | ||
| Turn-Off Fall Time | tf | ID=-4.3A, VDS=-10V, RL=6,RGEN=89 | 210 | ns | ||
| Body Diode Reverse Recovery Time | trr | IF=-1.3A, dI/dt=-100A/s | 22 | 33 | ns | |
| Body Diode Reverse Recovery Charge | Qrr | IF=-1.3A, dI/dt=-100A/s | 8 | 12 | nC | |
| Maximum Body-Diode Continuous Current | IS | 1.3 | A | |||
| Diode Forward Voltage | VSD | IS=-1.3A,VGS=0V | -1.2 | V | ||
| Zero Gate Voltage Drain Current | IDSS | VDS=-12V, VGS=0V | -1 | A | ||
| Zero Gate Voltage Drain Current | IDSS | VDS=-9.6V, VGS=0V, TJ= 55 | -25 | A | ||
| Continuous Drain Current | ID | VGS=4.5V @ TA=25 | -4.3 | A | ||
| Continuous Drain Current | ID | VGS=4.5V@ TA=70 | -3.4 | A | ||
| Pulsed Drain Current | IDM | -34 | A | |||
| Power Dissipation | PD | @ TA=25 | 1.3 | W | ||
| Power Dissipation | PD | @ TA=70 | 0.8 | W | ||
| Single Pulse Avalanche Energy | EAS | 33 | mJ | |||
| Thermal Resistance.Junction- to-Ambient | RthJA | 100 | /W | |||
| Junction Temperature | TJ | 150 | ||||
| Junction and Storage Temperature Range | Tstg | -55 | 150 |
2410121607_KEXIN-IRLML6401_C382329.pdf
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