Surface Mount N Channel MOSFET KEXIN AO3400 with High Current Rating and Low On Resistance Features
Key Attributes
Model Number:
AO3400
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
5.8A
Operating Temperature -:
-55℃~+150℃
RDS(on):
28mΩ@10V
Gate Threshold Voltage (Vgs(th)):
1.4V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
77pF@15V
Number:
1 N-channel
Input Capacitance(Ciss):
1.05nF
Pd - Power Dissipation:
1.4W
Gate Charge(Qg):
12nC@4.5V
Mfr. Part #:
AO3400
Package:
SOT-23-3
Product Description
Product Overview
The AO3400 (KO3400) is an N-Channel Enhancement MOSFET designed for surface-mount applications. It offers a VDS of 30V and a continuous drain current of 5.8A at VGS = 10V, with low on-resistance values at various gate-source voltages.
Product Attributes
- Brand: Kexin
- Type: SMD Type MOSFET
- Model: AO3400 (KO3400)
- Origin: China (implied by www.kexin.com.cn)
Technical Specifications
| Parameter | Symbol | Test Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDS | 30 | V | |||
| Gate-Source Voltage | VGS | 12 | V | |||
| Continuous Drain Current | ID | TA=25C | 5.8 | A | ||
| Continuous Drain Current | ID | TA=70C | 4.9 | A | ||
| Power Dissipation | PD | TA=25C | 1.4 | W | ||
| Power Dissipation | PD | TA=70C | 1 | W | ||
| Junction and Storage Temperature Range | TJ, TSTG | -55 | 150 | C | ||
| Electrical Characteristics | ||||||
| Drain-Source Breakdown Voltage | VDSS | ID=250A, VGS=0V | 30 | V | ||
| Gate-Source Leakage Current | IGSS | VDS=24V, VGS=0V | 5 | A | ||
| Gate-Source Leakage Current | IGSS | VDS=0V, VGS=12V | 100 | nA | ||
| Gate Threshold Voltage | VGS(th) | VDS=VGS, ID=250A | 0.7 | 1.1 | 1.4 | V |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=10V, ID=5.8A | 28 | 33 | m | |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=4.5V, ID=5A | 33 | 39 | m | |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=2.5V, ID=4.4A | 52 | m | ||
| Forward Transconductance | gFS | VDS=5V, ID=5.8A | 8.2 | S | ||
| Input Capacitance | Ciss | VDS=15V, VGS=0V, f=1MHz | 823 | 1050 | pF | |
| Output Capacitance | Coss | VDS=15V, VGS=0V, f=1MHz | 200 | pF | ||
| Reverse Transfer Capacitance | Crss | VDS=15V, VGS=0V, f=1MHz | 77 | pF | ||
| Gate Charge | Qg | VGS=10V, ID=5.8A | 9.7 | 12 | nC | |
| Source-Gate Charge | Qgs | 1.6 | nC | |||
| Drain-Gate Charge | Qgd | 3.1 | nC | |||
| Turn-On Delay Time | tD(on) | 3.3 | 5 | ns | ||
| Turn-On Rise Time | tr(on) | 4.8 | 7 | ns | ||
| Turn-Off Delay Time | tD(off) | 26.3 | 40 | ns | ||
| Turn-Off Fall Time | tf(off) | 4.1 | 6 | ns | ||
| Body Diode Reverse Recovery Time | trr | IF=5A, dI/dt=100A/s | 16 | 20 | ns | |
| Body Diode Reverse Recovery Charge | Qrr | IF=5A, dI/dt=100A/s | 8.9 | 12 | nC | |
| Maximum Body-Diode Continuous Current | IS | 2.5 | A | |||
| Forward Voltage (Body Diode) | VSD | IS=1A, VGS=0V | 0.7 | 1.1 | V | |
| Zero Gate Voltage Drain Current | IDSS | VGS=0V, VDS=15V | 1 | 10 | A | |
| Marking | A0* | |||||
2409302301_KEXIN-AO3400_C382311.pdf
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