Schottky Barrier Diode KUU MBR10200DS with 140 Volt RMS Reverse Voltage and High Surge Current Rating

Key Attributes
Model Number: MBR10200DS
Product Custom Attributes
Reverse Leakage Current (Ir):
5uA@200V
Voltage - DC Reverse (Vr) (Max):
200V
Voltage - Forward(Vf@If):
880mV@5A
Current - Rectified:
10A
Mfr. Part #:
MBR10200DS
Package:
TO-252
Product Description

Product Overview

The MBR10200DS is a Schottky Barrier Diode featuring guard ring die construction for transient protection, low power loss, high efficiency, and high surge capability. It is designed for use in low voltage, high frequency inverters, free-wheeling, and polarity protection applications. This product meets ROHS and Green Product requirements with full function reliability approved.

Product Attributes

  • Certifications: ROHS, Green Product

Technical Specifications

ParameterSymbolConditionsValueUnit
Peak repetitive reverse voltageVRRMTA=25C200V
Working peak reverse voltageVRWMTA=25C200V
DC blocking voltageVRTA=25C200V
RMS reverse voltageVR(RMS)TA=25C140V
Average rectified output currentIO5*210A
Non-Repetitive peak forward surge currentIFSM8.3ms half sine wave100*2A
Junction temperatureTj175C
Storage temperatureTstg-55~+150C
Thermal Resistance Junction to AmbientRJATO-252110C/W
Thermal Resistance Junction to AmbientRJATO-220F60C/W
Thermal Resistance Junction to CaseRJCTO-2526C/W
Thermal Resistance Junction to CaseRJCTO-220FC/W
Reverse voltageV(BR)IR=0.1mA200V
Reverse currentIRVR=200V0.5A
Reverse currentIRVR=200V5A
Forward voltageVF1IF=3A, Tj=250.82V
Forward voltageVF2IF=5A, Tj=250.85V
Forward voltageVF2IF=5A, Tj=250.88V
Forward voltageVF2IF=5A, Tj=1250.74V
Forward voltageVF3IF=10A, Tj=250.95V
Typical total capacitanceCtotVR=5V,f=1MHz50pF

2412121100_KUU-MBR10200DS_C42411716.pdf

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