Low On Resistance P Channel Enhancement Mode MOSFET KEXIN SI2301 in SMD SOT 23 3 Package for Electronic
Key Attributes
Model Number:
SI2301
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
2.4A
Operating Temperature -:
-
RDS(on):
100mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
950mV@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
65pF
Number:
1 P-Channel
Output Capacitance(Coss):
95pF
Input Capacitance(Ciss):
375pF
Pd - Power Dissipation:
900mW
Gate Charge(Qg):
10nC@4.5V
Mfr. Part #:
SI2301
Package:
SOT-23
Product Description
Product Overview
The SI2301 (KI2301) is a P-Channel Enhancement Mode MOSFET designed for various electronic applications. It features a low on-resistance and is available in an SMD SOT-23-3 package.
Product Attributes
- Brand: Kexin
- SMD Type: SOT-23-3
- Website: www.kexin.com.cn
Technical Specifications
| Parameter | Symbol | Test Conditions | Min | Typ | Max | Unit |
| Drain-Source Breakdown Voltage | VDSS | ID=-250A, VGS=0V | -20 | V | ||
| VDS=-20V, VGS=0V | -1 | V | ||||
| VDS=-20V, VGS=0V, TJ=55 | -10 | V | ||||
| Gate-Body leakage current | IGSS | VDS=0V, VGS=8V | 100 | nA | ||
| Gate Threshold Voltage | VGS(th) | VDS=VGS ID=-250A | -0.4 | -0.95 | V | |
| Static Drain-Source On-Resistance | RDS(On) | VGS=-4.5V, ID=-2.8A | 80 | 100 | m | |
| VGS=-2.5V, ID=-2.0A | 110 | 150 | m | |||
| On state drain current | ID(ON) | VGS=-4.5V, VDS -5V | -6 | A | ||
| VGS=-2.5V, VDS -5V | -3 | A | ||||
| Forward Transconductance | gFS | VDS=-5V, ID=-2.8A | 6.5 | S | ||
| Zero Gate Voltage Drain Current | IDSS | VGS=0V, VDS=-6V | -1.0 | A | ||
| Gate-Source leakage current | IGSS | VDS=0V, VGS=8V | 100 | nA | ||
| Diode Forward Voltage | VSD | IS=-0.75A,VGS=0V | -0.72 | -1.2 | V | |
| Maximum Body-Diode Continuous Current | IS | -0.75 | A | |||
| Drain-Source Voltage | VDS | -20 | V | |||
| Gate-Source Voltage | VGS | 8 | V | |||
| Continuous Drain Current | ID | Ta=25 Steady State | -2.4 | A | ||
| Ta=70 Steady State | -1.9 | A | ||||
| Pulsed Drain Current | IDM | -10 | A | |||
| Power Dissipation | PD | Ta=25 Steady State | 0.9 | W | ||
| Ta=70 Steady State | 0.7 | W | ||||
| Thermal Resistance.Junction- to-Ambient | RthJA | Surface Mounted on FR4 Board, t 5 sec. | 120 | /W | ||
| Surface Mounted on FR4 Board. | 140 | /W | ||||
| Junction Temperature | TJ | 150 | ||||
| Storage Temperature Range | Tstg | -55 | 150 |
2410121933_KEXIN-SI2301_C382299.pdf
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