Low On State Resistance Dual N Channel MOSFET KEXIN KI9926BDY Ideal for Switching and Amplification

Key Attributes
Model Number: KI9926BDY
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
8.2A
Operating Temperature -:
-55℃~+150℃
RDS(on):
36mΩ@2.5V,3.3A
Gate Threshold Voltage (Vgs(th)):
1.5V
Reverse Transfer Capacitance (Crss@Vds):
-
Number:
2 N-Channel
Input Capacitance(Ciss):
-
Pd - Power Dissipation:
2W
Gate Charge(Qg):
20nC@4.5V
Mfr. Part #:
KI9926BDY
Package:
SOP-8
Product Description

Product Overview

The SI9926BDY (KI9926BDY) is a Dual N-Channel MOSFET designed for various applications. It features low on-state resistance (RDS(on)) at different gate-source voltages, making it efficient for switching and amplification tasks.

Product Attributes

  • Brand: Kexin (implied by www.kexin.com.cn)
  • SMD Type: SOP-8
  • Marking: 9926B KA****

Technical Specifications

ParameterSymbolTest ConditionsMinTypMaxUnit
Drain-Source Breakdown VoltageVDSSVGS = 0 V, ID = 250 A20V
Zero Gate Voltage Drain CurrentIDSSVDS = 20V , VGS = 0V1A
Gate Threshold VoltageVGS(th)VDS = VGS , ID = 250uA0.51.5V
Gate-Body LeakageIGSSVDS = 0V , VGS = 8V100nA
Drain-Source On-State ResistanceRDS(on)VGS = 4.5V , ID = 8.5A0.0200.027
Drain-Source On-State ResistanceRDS(on)VGS = 2.5V , ID = 3.3A0.0290.036
On-State Drain CurrentID(on)VDS = 5V , VGS = 4.5V30A
Forward TransconductancegfsVDS = 15V , ID =8.2A29S
Total Gate ChargeQgVDD = 10V, ID = 1A , VGS = 4.5V , RG = 6,RL = 10 1120nC
Gate-Source ChargeQgs2.5nC
Gate-Drain ChargeQgd3.2nC
Turn-On Delay Timetd(on)VDS = 10V , VGS = 4.5V , ID = 8.2A3657ns
Rise Timetr5278ns
Turn-Off Delay Timetd(off)3250ns
Fall Timetf1525ns
Maximum Continuous Drain-Source Diode Forward CurrentIS0.95A
Diode Forward VoltageVSDIS = 1.7A, VGS = 0 V0.81.2V

2410121619_KEXIN-KI9926BDY_C489344.pdf

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