Power Switching N Channel MOSFET KEXIN SI2312 Featuring Low On Resistance and High Current Capability
Key Attributes
Model Number:
SI2312
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
4.9A
Operating Temperature -:
-55℃~+150℃
RDS(on):
51mΩ@1.8V
Gate Threshold Voltage (Vgs(th)):
850mV@250uA
Type:
N-Channel
Number:
1 N-channel
Pd - Power Dissipation:
1.25W
Gate Charge(Qg):
14nC@4.5V
Mfr. Part #:
SI2312
Package:
SOT-23
Product Description
Product Overview
The SI2312 (KI2312) is an N-Channel Enhancement Mode MOSFET designed for various electronic applications. It offers a low on-resistance and high current capability, making it suitable for power switching and control circuits.
Product Attributes
- Brand: Kexin
- SMD Type: SOT-23-3
- Origin: www.kexin.com.cn
Technical Specifications
| Parameter | Symbol | Test Conditions | Min | Typ | Max | Unit |
| Drain-Source Breakdown Voltage | VDSS | ID=250A, VGS=0V | 20 | V | ||
| Gate-Body Leakage Current | IGSS | VDS=0V, VGS=8V | 100 | nA | ||
| Gate Threshold Voltage | VGS(th) | VDS=VGS , ID=250A | 0.45 | 0.65 | 0.85 | V |
| On-State Drain Current | ID(on) | VDS 10 V, VGS = 4.5 V | 15 | A | ||
| Static Drain-Source On-Resistance | RDS(On) | VGS=4.5V, ID=5.0A | 27 | 33 | m | |
| VGS=2.5V, ID=4.5A | 33 | 40 | m | |||
| VGS=1.8V, ID=4.0A | 42 | 51 | m | |||
| Forward Transconductance | gFS | VDS=15V, ID=5.0A | 40 | S | ||
| Total Gate Charge | Qg | VGS=4.5V, VDS=10V, ID=5.0A | 11.2 | 14 | nC | |
| Gate Source Charge | Qgs | 1.4 | nC | |||
| Gate Drain Charge | Qgd | 2.2 | nC | |||
| Turn-On Delay Time | td(on) | 15 | 25 | ns | ||
| Turn-On Rise Time | tr | 40 | 60 | ns | ||
| Turn-Off Delay Time | td(off) | 48 | 70 | ns | ||
| Turn-Off Fall Time | tf | 31 | 45 | ns | ||
| Body Diode Reverse Recovery Time | trr | IF= 1.0A, dI/dt= 100A/s | 13 | 25 | ns | |
| Maximum Body-Diode Continuous Current | IS | 1.0 | A | |||
| Diode Forward Voltage | VSD | IS=1.0A,VGS=0V | 0.8 | 1.2 | V | |
| Zero Gate Voltage Drain Current | IDSS | VDS=20V, VGS=0V | 1 | A | ||
| VDS=20V, VGS=0V, Ta=70 | 75 | A | ||||
| Continuous Drain Current | ID | Ta=25 | 4.9 | A | ||
| Ta=70 | 3.9 | A | ||||
| Drain-Source Voltage | VDS | 20 | V | |||
| Gate-Source Voltage | VGS | 8 | V | |||
| Power Dissipation | PD | Ta=25, t5 sec | 1.25 | W | ||
| Ta=70, Steady State | 0.8 | W | ||||
| Thermal Resistance.Junction- to-Ambient | RthJA | Surface Mounted on 1 x 1 FR4 Board. | 100 | 166 | /W | |
| Thermal Resistance.Junction-to-Foot | RthJF | t5 sec | 50 | /W | ||
| Junction Temperature | TJ | 150 | ||||
| Storage Temperature Range | Tstg | -55 | 150 |
2410121740_KEXIN-SI2312_C382307.pdf
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