Surface Mount P Channel MOSFET KEXIN AO3407 with High Pulsed Drain Current and Low Thermal Resistance
Key Attributes
Model Number:
AO3407
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
4.1A
Operating Temperature -:
-55℃~+150℃
RDS(on):
52mΩ@10V
Gate Threshold Voltage (Vgs(th)):
3V@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
75pF
Number:
1 P-Channel
Output Capacitance(Coss):
120pF
Input Capacitance(Ciss):
700pF
Pd - Power Dissipation:
1.4W
Gate Charge(Qg):
14.3nC@4.5V
Mfr. Part #:
AO3407
Package:
SOT-23
Product Description
Product Overview
The AO3407 (KO3407) is a P-Channel Enhancement MOSFET designed for surface-mount applications. It offers key features such as a Drain-Source Voltage (VDS) of -30V and a continuous Drain Current (ID) of -4.1A at 25. This MOSFET is suitable for various electronic circuits requiring efficient power switching.
Product Attributes
- Brand: Kexin
- Origin: www.kexin.com.cn
- SMD Type: SOT-23
Technical Specifications
| Parameter | Symbol | Test Conditions | Min | Typ | Max | Unit |
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDS | -30 | V | |||
| Gate-Source Voltage | VGS | 20 | V | |||
| Continuous Drain Current | ID | Ta = 25 | -4.1 | A | ||
| Continuous Drain Current | ID | Ta = 70 | -3.5 | A | ||
| Pulsed Drain Current | IDM | -20 | A | |||
| Power Dissipation | PD | Ta = 25 | 1.4 | W | ||
| Power Dissipation | PD | Ta = 70 | 1 | W | ||
| Thermal Resistance.Junction- to-Ambient | RthJA | Steady State | 125 | /W | ||
| Thermal Resistance.Junction- to-Lead | RthJL | 60 | /W | |||
| Junction Temperature | TJ | 150 | ||||
| Storage Temperature Range | Tstg | -55 | 150 | |||
| Electrical Characteristics | ||||||
| Drain-Source Breakdown Voltage | VDSS | ID=-250A, VGS=0V | -30 | V | ||
| Gate-Body leakage current | IGSS | VDS=0V, VGS=20V | 100 | nA | ||
| Gate Threshold Voltage | VGS(th) | VDS=VGS, ID=-250A | -1 | -1.8 | -3 | V |
| Static Drain-Source On-Resistance | RDS(On) | VGS = -10V, ID = -4.1A | 40.5 | 52 | m | |
| Static Drain-Source On-Resistance | RDS(On) | VGS = -4.5V, ID = -3A | 64 | 87 | m | |
| On state drain current | ID(ON) | VGS=-4.5V, VDS=-5V | -10 | A | ||
| Forward Transconductance | gFS | VDS=-5V, ID=-4A | 5.5 | 8.2 | S | |
| Input Capacitance | Ciss | VGS=0V, VDS=-15V, f=1MHz | 700 | pF | ||
| Output Capacitance | Coss | VGS=0V, VDS=-15V, f=1MHz | 120 | pF | ||
| Reverse Transfer Capacitance | Crss | VGS=0V, VDS=-15V, f=1MHz | 75 | pF | ||
| Gate resistance | Rg | VGS=0V, VDS=0V, f=1MHz | 10 | |||
| Total Gate Charge | Qg | VGS=-10V, VDS=-15V, RL=3.6,RGEN=3 | 14.3 | nC | ||
| Gate Source Charge | Qgs | VGS=-10V, VDS=-15V, RL=3.6,RGEN=3 | 7 | nC | ||
| Gate Drain Charge | Qg | VGS=-10V, VDS=-15V, RL=3.6,RGEN=3 | 3.1 | nC | ||
| Turn-On DelayTime | td(on) | 8.6 | ns | |||
| Turn-On Rise Time | tr | 5 | ns | |||
| Turn-Off DelayTime | td(off) | 28.2 | ns | |||
| Turn-Off Fall Time | tf | 13.5 | ns | |||
| Body Diode Reverse Recovery Time | trr | IF=-4A, dI/dt=100A/s | 27 | ns | ||
| Body Diode Reverse Recovery Charge | Qrr | IF=-4A, dI/dt=100A/s | 15 | nC | ||
| Maximum Body-Diode Continuous Current | IS | -2.2 | A | |||
| Diode Forward Voltage | VSD | IS=-1A,VGS=0V | -0.77 | -1 | V | |
| Zero Gate Voltage Drain Current | IDSS | VGS=0V, VDS=-15V, f=1MHz | -1 | A | ||
2410121933_KEXIN-AO3407_C382316.pdf
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