Plastic Encapsulate Zener Diode JUXING BZT52C15VS with Medium Current Rating and 200mW Power Dissipation
Key Attributes
Model Number:
BZT52C15VS
Product Custom Attributes
Impedance(Zzt):
30Ω
Diode Configuration:
Independent
Zener Voltage(Range):
13.8V~15.6V
Pd - Power Dissipation:
200mW
Zener Voltage(Nom):
15V
Mfr. Part #:
BZT52C15VS
Package:
SOD-323
Product Description
BZT52CxxS Series Plastic-Encapsulate Zener Diode
The BZT52CxxS series is a range of general-purpose, medium current Zener diodes featuring a planar die construction and suitable for automated assembly processes. These diodes offer 200mW power dissipation on a ceramic PBC and are available in a lead-free version. They are ideally suited for applications requiring precise voltage regulation.
Product Attributes
- Brand: trr-jx.com
- Product Type: Plastic-Encapsulate Zener Diode
- Package: SOD-323
- Material: Ceramic PBC (for power dissipation)
- Certifications: Available in lead-free version
Technical Specifications
| Type | Marking | Zener Voltage Range (Note 2) | Test Current | Maximum Zener Impedance (Note 3) | Maximum Reverse Current (Note 2) | Typical Temperature Coefficient @IZTC | Junction Temperature | Storage Temperature Range | Power Dissipation(Note 1) |
| VZ@IZT (V) | IZT (mA) | ZZT@IZT () | IZK (A) | mV/ | Tj () | Tstg () | PD (mW) | ||
| BZT52C2V4S | WX | 2.20 ~ 2.60 | 5 | 600 | 50 | -3.5 | 150 | -55~+150 | 200 |
| BZT52C2V7S | W1 | 2.5 ~ 2.9 | 5 | 600 | 20 | -3.5 | 150 | -55~+150 | 200 |
| BZT52C3V0S | W2 | 2.8 ~ 3.2 | 5 | 600 | 10 | -3.5 | 150 | -55~+150 | 200 |
| BZT52C3V3S | W3 | 3.1 ~ 3.5 | 5 | 600 | 5 | -3.5 | 150 | -55~+150 | 200 |
| BZT52C3V6S | W4 | 3.4 ~ 3.8 | 5 | 600 | 5 | -3.5 | 150 | -55~+150 | 200 |
| BZT52C3V9S | W5 | 3.7 ~ 4.1 | 5 | 600 | 3 | -3.5 | 150 | -55~+150 | 200 |
| BZT52C4V3S | W6 | 4.0 ~ 4.6 | 5 | 600 | 3 | -3.5 | 150 | -55~+150 | 200 |
| BZT52C4V7S | W7 | 4.4 ~ 5.0 | 5 | 500 | 3 | -3.5 | 150 | -55~+150 | 200 |
| BZT52C5V1S | W8 | 4.8 ~ 5.4 | 5 | 480 | 2 | -2.7 | 150 | -55~+150 | 200 |
| BZT52C5V6S | W9 | 5.2 ~ 6.0 | 5 | 400 | 1 | -2 | 150 | -55~+150 | 200 |
| BZT52C6V2S | WA | 5.8 ~ 6.6 | 5 | 150 | 3 | 0.4 | 150 | -55~+150 | 200 |
| BZT52C6V8S | WB | 6.4 ~ 7.2 | 5 | 80 | 2 | 1.2 | 150 | -55~+150 | 200 |
| BZT52C7V5S | WC | 7.0 ~ 7.9 | 5 | 80 | 1 | 2.5 | 150 | -55~+150 | 200 |
| BZT52C8V2S | WD | 7.7 ~ 8.7 | 5 | 80 | 0.7 | 3.2 | 150 | -55~+150 | 200 |
| BZT52C9V1S | WE | 8.5 ~ 9.6 | 5 | 100 | 0.5 | 3.8 | 150 | -55~+150 | 200 |
| BZT52C10S | WF | 9.4 ~ 10.6 | 5 | 150 | 0.2 | 4.5 | 150 | -55~+150 | 200 |
| BZT52C11S | WG | 10.4 ~ 11.6 | 5 | 150 | 0.1 | 5.4 | 150 | -55~+150 | 200 |
| BZT52C12S | WH | 11.4 ~ 12.7 | 5 | 150 | 0.1 | 6.0 | 150 | -55~+150 | 200 |
| BZT52C13S | WI | 12.4 ~ 14.1 | 5 | 170 | 0.1 | 7.0 | 150 | -55~+150 | 200 |
| BZT52C15S | WJ | 13.8 ~ 15.6 | 5 | 200 | 0.1 | 9.2 | 150 | -55~+150 | 200 |
| BZT52C16S | WK | 15.3 ~ 17.1 | 5 | 200 | 0.1 | 10.4 | 150 | -55~+150 | 200 |
| BZT52C18S | WL | 16.8 ~ 19.1 | 5 | 225 | 0.1 | 12.4 | 150 | -55~+150 | 200 |
| BZT52C20S | WM | 18.8 ~ 21.2 | 5 | 225 | 0.1 | 14.4 | 150 | -55~+150 | 200 |
| BZT52C22S | WN | 20.8 ~ 23.3 | 5 | 250 | 0.1 | 16.4 | 150 | -55~+150 | 200 |
| BZT52C24S | WO | 22.8 ~ 25.6 | 5 | 250 | 0.1 | 18.4 | 150 | -55~+150 | 200 |
| BZT52C27S | WP | 25.1 ~ 28.9 | 2 | 300 | 0.1 | 21.4 | 150 | -55~+150 | 200 |
| BZT52C30S | WQ | 28.0 ~ 32.0 | 2 | 300 | 0.1 | 24.4 | 150 | -55~+150 | 200 |
| BZT52C33S | WR | 31.0 ~ 35.0 | 2 | 325 | 0.1 | 27.4 | 150 | -55~+150 | 200 |
| BZT52C36S | WS | 34.0 ~ 38.0 | 2 | 350 | 0.1 | 30.4 | 150 | -55~+150 | 200 |
| BZT52C39S | WT | 37.0 ~ 41.0 | 2 | 350 | 0.1 | 33.4 | 150 | -55~+150 | 200 |
| BZT52C43S | WU | 40.0 ~ 46.0 | 2 | 700 | 0.1 | 10 | 150 | -55~+150 | 200 |
Notes:
1. Device mounted on ceramic PCB: 7.6mm x 9.4mm x 0.87mm with pad areas 25mm2.
2. Short duration test pulse used to minimize self-heating effect.
3. f = 1kHz.
2309131013_JUXING-BZT52C15VS_C5365552.pdf
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