500V 20A N Channel Power MOSFET KIA Semicon Tech KIA20N50HF Designed for Power Switching and Control
Key Attributes
Model Number:
KIA20N50HF
Product Custom Attributes
Drain To Source Voltage:
500V
Current - Continuous Drain(Id):
20A
Operating Temperature -:
-
RDS(on):
260mΩ@10V,10A
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
40pF
Number:
1 N-channel
Input Capacitance(Ciss):
2.7nF
Output Capacitance(Coss):
400pF
Pd - Power Dissipation:
-
Gate Charge(Qg):
70nC@10V
Mfr. Part #:
KIA20N50HF
Package:
TO-220IS
Product Description
Product Overview
The KIA20N50H is an N-Channel enhancement mode silicon gate power MOSFET designed for high voltage, high speed power switching applications. It is suitable for use in high efficiency switched mode power supplies and active power factor correction.
Product Attributes
- Brand: KIA SEMICONDUCTORS
- Model: 20N50H
- Type: N-CHANNEL MOSFET
- Voltage Rating: 500V
- Current Rating: 20A
Technical Specifications
| Parameter | Symbol | TO220F | TO247/TO3P | Units | Conditions | |
| Drain-source voltage | VDSS | 500 | 500 | V | ||
| Gate-source voltage | VGSS | +30 | +30 | V | ||
| Drain current continuous | ID | 20.0 | 13.0 | A | TC=25C | |
| * | 13.0 | A | TC=100C | |||
| Drain current pulsed | IDP | 80* | 80 | A | (note1) | |
| 80 | 80 | A | ||||
| Avalanche energy Repetitive | EAR | 3.8 | 28 | mJ | (note1) | |
| Avalanche energy Single pulse | EAS | 1110 | 1110 | mJ | (note2) | |
| Peak diode recovery dv/dt | dv/dt | 4.5 | 4.5 | V/ns | (note 3) | |
| Total power dissipation | PD | 41.5 | 280 | W | TC=25C | |
| 0.33 | 2.3 | W/C | derate above 25C | |||
| Junction temperature | TJ | +150 | +150 | C | ||
| Storage temperature | TSTG | -55~+150 | -55~+150 | C | ||
| Thermal characteristics | ||||||
| Thermal resistance,junction-ambient | RthJA | 62.5 | 40 | C/W | ||
| Thermal resistance,case-to-sink typ. | RthCS | -- | 0.24 | |||
| Thermal resistance,Junction-case | RthJC | 3.3 | 0.44 | |||
| Electrical characteristics | ||||||
| Off characteristics | ||||||
| Drain-source breakdown voltage | BVDSS | 500 | 500 | V | VGS=0V,ID=250A | |
| Zero gate voltage drain current | IDSS | 1 | 1 | A | VDS=500V ,VGS=0V | |
| 10 | 10 | A | VDS=400V ,TC=125 C | |||
| Gate-body leakage current | IGSS | 100 | 100 | nA | VGS=30V,VDS=0V | |
| -100 | -100 | nA | VGS=-30V,VDS=0V | |||
| Breakdown voltage temperature coefficient | BVDSS/TJ | 0.5 | 0.5 | V/C | ID=250A | |
| On characteristics | ||||||
| Gate threshold voltage | VGS(th) | 2.0 | 2.0 | V | VDS=VGS, ID=250A | |
| Static drain-source on-resistance | RDS(on) | 0.21 | 0.21 | VGS=10V,ID=10.0A | ||
| Dynamic characteristics | ||||||
| Input capacitance | Ciss | 2700 | 2700 | pF | VDS=25V,VGS=0V, f=1MHz | |
| Output capacitance | Coss | 400 | 400 | pF | ||
| Reverse transfer capacitance | Crss | 40 | 40 | pF | ||
| Switching characteristics | ||||||
| Turn-on delay time | td(on) | 100 | 100 | ns | VDD=250V,ID=20.0A, RG=25 (note4,5) | |
| Rise time | tr | 400 | 400 | ns | ||
| Turn-off delay time | td(off) | 100 | 100 | ns | ||
| Fall time | tf | 100 | 100 | ns | ||
| Total gate charge | Qg | 70 | 70 | nC | VDS=400V,ID=20.0A , VGS=10V (note4,5) | |
| Gate-source charge | Qgs | 18 | 18 | nC | ||
| Gate-drain charge | Qgd | 35 | 35 | nC | ||
| Drain-source diode characteristics | ||||||
| Drain-source diode forward voltage | VSD | 1.5 | 1.5 | V | VGS=0V,ID=20.0A | |
| Continuous drain-source current | ISD | 20.0 | 20.0 | A | ||
| Pulsed drain-source current | ISM | 80.0 | 80.0 | A | ||
| Reverse recovery time | trr | 500 | 500 | ns | ISD=20.0A dlSD/dt=100A/s (note4) | |
| Reverse recovery charge | Qrr | 7.2 | 7.2 | C | ||
2410010000_KIA-Semicon-Tech-KIA20N50HF_C135545.pdf
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