Low On Resistance N Channel MOSFET KIA Semicon Tech KNB2915A 130A 150V for Battery and Motor Control
Key Attributes
Model Number:
KNB2915A
Product Custom Attributes
Drain To Source Voltage:
150V
Current - Continuous Drain(Id):
160A
Operating Temperature -:
-
RDS(on):
15mΩ@10V,50A
Gate Threshold Voltage (Vgs(th)):
5V@250uA
Type:
-
Reverse Transfer Capacitance (Crss@Vds):
90pF
Number:
1 N-channel
Output Capacitance(Coss):
330pF
Input Capacitance(Ciss):
3.56nF
Pd - Power Dissipation:
428W
Gate Charge(Qg):
70nC@10V
Mfr. Part #:
KNB2915A
Package:
TO-263
Product Description
130A, 150V N-CHANNEL MOSFET KNX2915A
The KIA SEMICONDUCTORS KNX2915A is a 130A, 150V N-Channel MOSFET featuring CRM(CQ) advanced Trench technology for extremely low on-resistance (RDS(ON)= 10m typ.) and excellent QgxRDS(on) product (FOM). It is qualified according to JEDEC criteria and is suitable for applications such as motor control and drive, battery management, and UPS (Uninterruptible Power Supplies).
Product Attributes
- Brand: KIA
- Origin: KIA SEMICONDUCTORS
- Certifications: Qualified according to JEDEC criteria
Technical Specifications
| Part Number | Package | Brand | Drain-to-Source Voltage (VDSS) | Continuous Drain Current (ID) @ TC=25C (Silicon limited) | Gate-Source Voltage (VGS) | Power Dissipation (Ptot) @ TC=25C | RDS(on) @ VGS=10V, ID=50A, Tj=25C | BVDSS @ VGS=0V, ID=250A | IDSS @ VDS=150V, VGS=0V, Tj=25C | VGS(th) @ VDS=VGS, ID=250A | IGSS @ VGS=25V, VDS=0V | Ciss @ VDS=0V, VGS=75V, F=1MHz | Coss | Crss | Qg @ VDS=75V, ID=50A, VGS=10V | Qgs | Qgd | VSD @ ISD=30A | trr @ IF=50A, DlF/dt=100A/s | Qrr |
| KNP2915A | TO-220 | KIA | 150 V | 130 A | 25 V | 428 W | 10 m | 150 V | 0.05 A | 3 V | 10 nA | 3560 pF | 330 pF | 90 pF | 70 nC | 24 nC | 25 nC | 1.3 V | 70 ns | 233 nC |
| KNB2915A | TO-263 | KIA | 150 V | 130 A | 25 V | 428 W | 10 m | 150 V | 0.05 A | 3 V | 10 nA | 3560 pF | 330 pF | 90 pF | 70 nC | 24 nC | 25 nC | 1.3 V | 70 ns | 233 nC |
2409302301_KIA-Semicon-Tech-KNB2915A_C1509104.pdf
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