MOSFET KIA Semicon Tech KND6610A designed for synchronous buck converters and green compliance
Product Overview
The KIA Semiconductors KNX6610A is a high-performance N-channel MOSFET featuring extreme high cell density with excellent RDS(ON) and gate charge. Designed for synchronous buck converter applications, it meets RoHS and green product requirements, with 100% EAS guaranteed and full function reliability approved. Its advanced trench technology offers super low gate charge and excellent Cdv/dt effect suppression.
Product Attributes
- Brand: KIA SEMICONDUCTORS
- Product Name: KNX6610A
- Certifications: RoHS, Green Product
Technical Specifications
| Parameter | Symbol | Test Conditions | Min | Typ | Max | Units |
|---|---|---|---|---|---|---|
| Drain-source breakdown voltage | BVDSS | VGS=0V,ID=250A | 100 | - | - | V |
| Drain-source on-resistance | RDS(on) | VGS=10V,ID=8A | - | 70 | 80 | m |
| Gate threshold voltage | VGS(TH) | VDS= VGS,ID=250uA | 1.0 | 1.5 | 2.5 | V |
| Continuous drain current | ID | VGS@10V, TC=25C | - | - | 15 | A |
| Continuous drain current | ID | VGS@10V, TC=100C | - | - | 8.5 | A |
| Pulsed drain current | IDM | - | - | 24 | A | |
| Power dissipation | PD | TC=25C | - | - | 34.7 | W |
| Single pulse avalanche energy | EAS | - | 7.3 | - | mJ | |
| Avalanche current | IAS | - | - | 11 | A | |
| Operating junction and storage temperature range | TJ ,TSTG | -55 | - | 150 | C | |
| Total gate charge | Qg | VDS=80V, ID=10A, VGS=10V | - | 26.2 | - | nC |
| Input capacitance | Ciss | VDS=15V,VGS=0V, f=1MHz | - | 1535 | - | pF |
| Output capacitance | Coss | VDS=15V,VGS=0V, f=1MHz | - | 60 | - | pF |
| Reverse transfer capacitance | Crss | VDS=15V,VGS=0V, f=1MHz | - | 37 | - | pF |
| Continuous source current | IS | VD=VG=0V, Force current | - | - | 15 | A |
| Diode forward voltage | VSD | IS=1A, VGS=0V, TJ=25C | - | - | 1.2 | V |
Applications
- High frequency point-of-load synchronous buck converter
- Networking DC-DC power system
- Load switch
2410010000_KIA-Semicon-Tech-KND6610A_C134930.pdf
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