16A 650V N CHANNEL MOSFET KIA Semicon Tech KNF6765A featuring planar technology and RoHS compliance
Key Attributes
Model Number:
KNF6765A
Product Custom Attributes
Drain To Source Voltage:
650V
Current - Continuous Drain(Id):
16A
RDS(on):
550mΩ@10V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Reverse Transfer Capacitance (Crss@Vds):
100pF@25V
Number:
1 N-channel
Input Capacitance(Ciss):
2.3nF@25V
Pd - Power Dissipation:
65W
Gate Charge(Qg):
35nC@10V
Mfr. Part #:
KNF6765A
Package:
TO-220F
Product Description
Product Overview
This is a 16A, 650V N-CHANNEL MOSFET from KIA SEMICONDUCTORS, model KNF6765A. It features a proprietary new planar technology, RoHS compliance, low gate charge for minimized switching loss, and a fast recovery body diode. It is suitable for applications such as adaptors, chargers, and SMPS standby power.
Product Attributes
- Brand: KIA
- Part Number: KNF6765A
- Package: TO-220F
- Certifications: RoHS Compliant
Technical Specifications
| Parameter | Symbol | Ratings | Unit | Test Conditions | Min. | Typ. | Max. |
| Absolute Maximum Ratings | VDSS | 650 | V | ||||
| VGSS | ±30 | V | |||||
| ID | 16 | A | |||||
| IDM | 64 | A | Pulsed Drain Current at VGS=10V | ||||
| EAS | 1100 | mJ | Single Pulse Avalanche Energy L=30mH | ||||
| PD | 65 | W | Power Dissipation | ||||
| PD Derating Factor | 0.52 | W/°C | above 25°C | ||||
| Electrical Characteristics | BVDSS | 650 | V | VGS=0V, ID=250uA | 650 | - | - |
| RDS(ON) | 0.55 | Ω | VGS=10V, ID=8A | - | 0.45 | 0.55 | |
| VGS(TH) | 4.0 | V | VDS=VGS,ID=250uA | 2.0 | - | 4.0 | |
| IDSS | 1 | uA | VDS=650V, VGS=0V | - | - | 1 | |
| IDSS | 100 | uA | VDS=520V,TJ=125°C | - | - | 100 | |
| IGSS | ±100 | nA | VGS=±30V, VDS=0V | - | - | ±100 | |
| Capacitance | Ciss | 2300 | pF | VGS=0V,VDS=25V, f=1.0MHZ | - | 2300 | - |
| Coss | 220 | pF | - | 220 | - | ||
| Crss | 100 | pF | - | 100 | - | ||
| Charge | Qg | 35 | nC | VDD=325V,ID=16A, VGS=10V | - | 35 | - |
| Qgs | 10 | nC | - | 10 | - | ||
| Qgd | 6 | nC | - | 6 | - | ||
| Switching Times | td(ON) | 30 | nS | VDD=325V, ID=16A, RG=25Ω,VGS=10V | - | 30 | - |
| trise | 40 | nS | - | 40 | - | ||
| td(OFF) | 80 | nS | - | 80 | - | ||
| tfall | 40 | nS | - | 40 | - | ||
| Diode Characteristics | ISD | 16 | A | Integral pn-diode in MOSFET | - | - | 16 |
| ISM | 64 | A | Pulsed Source Current | - | - | 64 | |
| VSD | 1.5 | V | IS=16A, VGS=0V | - | - | 1.5 | |
| Reverse Recovery | trr | 550 | ns | IS=16A, VGS=10V di/dt=100A/us | - | 550 | - |
| Qrr | 4.2 | uC | - | 4.2 | - | ||
| Thermal Characteristics | RθJC | 1.92 | °C/W | Thermal Resistance, Junction-to-Case | 1.92 | ||
| RθJA | 100 | °C/W | Thermal Resistance, Junction-to-Ambient | 100 |
2411121110_KIA-Semicon-Tech-KNF6765A_C41369536.pdf
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