Dual P channel MOSFET KIA Semicon Tech KPE4403A2 for power electronics and synchronous buck designs
Key Attributes
Model Number:
KPE4403A2
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
5A
Operating Temperature -:
-55℃~+150℃@(Tj)
RDS(on):
55mΩ@10V
Gate Threshold Voltage (Vgs(th)):
2.5V@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
80pF
Number:
2 P-Channel
Output Capacitance(Coss):
-
Input Capacitance(Ciss):
580pF@15V
Pd - Power Dissipation:
1.5W
Gate Charge(Qg):
6.5nC@4.5V
Mfr. Part #:
KPE4403A2
Package:
SOP-8
Product Description
Product Overview
The KPE4403A2 is a high cell density trenched Dual P-channel MOSFET designed for synchronous buck converter applications. It offers excellent RDS(on) and low gate charge, with features like super low gate charge and excellent Cdv/dt effect decline due to its advanced high cell density trench technology. This device meets RoHS and Green product requirements.
Product Attributes
- Brand: KIA SEMICONDUCTORS
- Model: KPE4403A2
- Type: Dual P-CHANNEL MOSFET
- Certifications: RoHS, Green device available
Technical Specifications
| Parameter | Symbol | Test Conditions | Min | Typ | Max | Units |
| Drain-Source breakdown voltage | BVDSS | VGS=0V, ID=-250A | -30 | - | - | V |
| BVDSS Temperature Coefficient | BVDSS/TJ | Reference to 25 C,ID=-1mA | - | -0.023 | - | V/ C |
| Drain-Source Leakage Current | IDSS | VDS=-24V,VGS=0V,TJ=25C | - | - | 1 | A |
| Drain-Source Leakage Current | IDSS | VDS=-24V,VGS=0V,TJ=55C | - | - | 5 | A |
| Gate-source leakage current | IGSS | VGS=+20V,VDS=0V | - | - | +100 | nA |
| Gate threshold voltage | VGS(th) | VDS=VGS, ID=-250A | -1.2 | - | -2.5 | V |
| Gate threshold voltage Temperature coefficient | VGS(th) | - | -4 | - | Mv/ C | |
| Static drain-source on- resistance | RDS(on) | VGS=-10V,ID=-4A | - | 42 | 55 | m |
| Static drain-source on- resistance | RDS(on) | VGS=-4.5V,ID=-3A | - | 64 | 78 | m |
| Forward transcend ductance | gFS | VDS=-5V, ID=-4A | - | 10 | - | S |
| Total gate charge | Qg | VDS=-15V, VGS=-4.5V ID =-4A | - | 6.5 | - | nC |
| Gate-source charge | Qgs | - | 2.2 | - | ||
| Gate-drain charge | Qgd | - | 2 | - | ||
| Turn-on delay time | td(on) | VDD=-15V, RG=3.3, VGS=-10V ID=-4A | - | 2.7 | - | ns |
| Rise time | tr | - | 8.6 | - | ||
| Turn-off delay time | td(off) | - | 40 | - | ||
| Fall time | tf | - | 5 | - | ||
| Input capacitance | Ciss | VGS=0V, VDS=-15V F=1.0MHZ | - | 580 | - | pF |
| Output capacitance | Coss | - | 95 | - | ||
| Reverse transfer capacitance | Crss | - | 80 | - | ||
| Continuous source current | IS | VG=VD=0V,Force current | - | - | -5.0 | A |
| Pulsed source current | ISM | - | - | -25 | A | |
| Diode forward voltage | VSD | VGS=0V,IS=-1A, TJ=25C | - | - | -1.3 | V |
| Reverse recovery time | trr | IF=-4A,dl/dt=100A/us, TJ=25C | - | 7.5 | - | nS |
| Reverse recovery charge | Qrr | - | 2.6 | - | nC |
2410010000_KIA-Semicon-Tech-KPE4403A2_C1509092.pdf
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