P Channel MOSFET KIA Semicon Tech KIA3407 Offering Low Gate Charge and Excellent RDSon for Load Switching
Key Attributes
Model Number:
KIA3407
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
4.1A
Operating Temperature -:
-55℃~+150℃
RDS(on):
90mΩ@4.5V,3A
Gate Threshold Voltage (Vgs(th)):
3V@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
75pF
Number:
1 P-Channel
Input Capacitance(Ciss):
840pF
Output Capacitance(Coss):
120pF
Pd - Power Dissipation:
1.4W
Gate Charge(Qg):
18nC@10V
Mfr. Part #:
KIA3407
Package:
SOT-23
Product Description
Product Overview
The KIA3407 is a P-CHANNEL MOSFET utilizing advanced trench technology, offering excellent RDS(on) and low gate charge. It is suitable for use as a load switch or in PWM applications. This is a standard product, Pb-free, and meets ROHS & Sony 259 specifications, with a Green Product ordering option.
Product Attributes
- Brand: KIA SEMICONDUCTORS
- Model: KIA3407
- Type: P-CHANNEL MOSFET
- Certifications: ROHS, Sony 259
- Environmental: Pb-free, Green Product
Technical Specifications
| Parameter | Symbol | Conditions | Min | Typ | Max | Units |
| Drain-source breakdown voltage | BVDSS | VGS=0V,ID=-250A | -30 | - | - | V |
| Zero gate voltage drain current | IDSS | VDS=-24V, VGS=0V | - | - | -1 | A |
| Zero gate voltage drain current | IDSS | TJ=55C | - | - | -5 | A |
| Gate- body leakage current | IGSS | VGS=+20V, VDS=0V | - | - | +100 | nA |
| Gate threshold voltage | VGS(th) | VDS=VGS, ID=-250A | -1 | -1.8 | -3 | V |
| On state drain current | ID(on) | VGS=-4.5V, VDS=-5V | -10 | - | - | A |
| Static drain-source on-resistance | RDS(on) | VGS=-10V,ID=-4.1A | - | - | 60 | m |
| Static drain-source on-resistance | RDS(on) | VGS=-4.5V,ID=-3.0A | - | - | 90 | m |
| Forward transconductance | gfs | VDS=-5.0V, ID=-4.0A | 5.5 | 8.2 | - | S |
| Diode forward voltage | VSD | VGS=0V,IS=-1A | - | -0.77 | -1.0 | V |
| Maximum body-diode continuous current | IS | - | - | -2.2 | A | |
| Input capacitance | Ciss | VDS=-15V,VGS=0V, f=1MHz | - | 700 | 840 | pF |
| Output capacitance | Coss | VDS=-15V,VGS=0V, f=1MHz | - | 120 | - | pF |
| Reverse transfer capacitance | Crss | VDS=-15V,VGS=0V, f=1MHz | - | 75 | - | pF |
| Gate resistance | Rg | VDS=0V, VGS=0V,f=1MHz | - | 10 | 15 | |
| Total gate charge(10V) | Qg | VDS=-15V, VGS=-10V, ID =-4.0A | - | 14.3 | 18 | nC |
| Total gate charge(4.5V) | Qg | VDS=-15V, VGS=-4.5V, ID =-4.0A | - | 7 | - | nC |
| Gate-source charge | Qgs | VDS=-15V, VGS=-4.5V, ID =-4.0A | - | 3.1 | - | nC |
| Gate-drain charge | Qgd | VDS=-15V, VGS=-4.5V, ID =-4.0A | - | 3 | - | nC |
| Turn-on delay time | td(on) | VDS=-15V, RL=3.6,, RG=3, VGS=-10V | - | 8.6 | - | ns |
| Rise time | tr | VDS=-15V, RL=3.6,, RG=3, VGS=-10V | - | 5 | - | ns |
| Turn-off delay time | td(off) | VDS=-15V, RL=3.6,, RG=3, VGS=-10V | - | 28.2 | - | ns |
| Fall time | tf | VDS=-15V, RL=3.6,, RG=3, VGS=-10V | - | 13.5 | - | ns |
| Reverse recovery time | trr | IF=-4A,dI/dt=100A/s | - | 27 | 36 | nS |
| Reverse recovery charge | Qrr | IF=-4A,dI/dt=100A/s | - | 15 | - | nC |
2410010000_KIA-Semicon-Tech-KIA3407_C116047.pdf
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