NChannel EnhancementMode MOSFET with ESD Protection KUU 2N7002K Compact SOT23 Package Electronics
Key Attributes
Model Number:
2N7002K
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
300mA
Operating Temperature -:
-55℃~+150℃@(Tj)
RDS(on):
2.8Ω@10V,500mA
Gate Threshold Voltage (Vgs(th)):
2.5V@250uA
Type:
N-Channel
Number:
1 N-channel
Pd - Power Dissipation:
225mW
Mfr. Part #:
2N7002K
Package:
SOT-23
Product Description
Product Overview
The 2N7002K is an N-Channel Enhancement-Mode MOS FET with ESD protection, designed for various electronic applications. It offers efficient switching and signal amplification capabilities within a compact SOT-23 package.
Product Attributes
- Brand: 2N7002K=72K
- Package Type: SOT-23
- Channel Type: N-Channel
- Mode: Enhancement-Mode
- Feature: ESD Protection
Technical Specifications
| Characteristic | Symbol | Min | Typ | Max | Unit | Notes |
| Drain-Source Breakdown Voltage | BVDSS | 60 | - | - | V | ID=250uA,VGS=0V |
| Gate Threshold Voltage | VGS(th) | 1.0 | - | 2.5 | V | ID=250uA,VGS= VDS |
| Drain-Source On Voltage | VDS(ON) | - | - | 0.375 | V | ID=50mA,VGS=5V |
| Drain-Source On Voltage | VDS(ON) | - | - | 3.75 | V | ID=500mA,VGS=10V |
| Diode Forward Voltage Drop | VSD | - | - | 1.5 | V | ISD=200mA,VGS=0V |
| Zero Gate Voltage Drain Current | IDSS | - | - | 1 | uA | VGS=0V, VDS= BVDSS |
| Gate Body Leakage | IGSS | - | - | +1 | uA | VGS=+10V, VDS=0V |
| Gate Body Leakage | IGSS | - | - | +10 | uA | VGS=+20V, VDS=0V |
| Static Drain-Source On-State Resistance | RDS(ON) | - | - | 2.8 | ID=500mA,VGS=10V | |
| Static Drain-Source On-State Resistance | RDS(ON) | - | - | 3.2 | ID=50mA,VGS=5V | |
| ESD Rating | ESD | - | - | 2000 | V | HBM |
| Characteristic | Symbol | Max | Unit | Notes |
| Drain-Source Voltage | BVDSS | 60 | V | - |
| Gate- Source Voltage | VGS | +20 | V | - |
| Drain Current (continuous) | IDR | 300 | mA | - |
| Drain Current (pulsed) | IDRM | 500 | mA | - |
| Total Device Dissipation | PD | 225 | mW | TA=25 |
| Derate above25 | - | 1.8 | mW/ | - |
| Thermal Resistance Junction to Ambient | RJA | 417 | /W | - |
| Junction and Storage Temperature | TJ,Tstg | 150 | -55to+150 |
2410121507_KUU-2N7002K_C3015219.pdf
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