Power MOSFET JUXING 50N06 N Channel 60V 50A Low On Resistance TO 252 Package
Product Overview
The 50N06 is an N-Channel Mode Power MOSFET designed for power switching applications. It offers low on-resistance characteristics at various gate-source voltages and features a continuous drain current capability of 50A with a drain-source voltage of 60V. This MOSFET is packaged in a TO-252-2L package.
Product Attributes
- Brand: trr-jx.com
- Product ID: 50N06
- Package: TO-252
- Channel Mode: N-Channel
Technical Specifications
| Symbol | Parameter | Test conditions | Min | Typ | Max | Unit |
| MAXIMUM RATINGS (Ta=25 unless otherwise noted) | ||||||
| VDS | Drain-Source Voltage | 60 | V | |||
| VGS | Gate-Source Voltage | ±20 | V | |||
| ID | Continuous Drain Current | 50 | A | |||
| IDM | Pulsed Drain Current | 200 | A | |||
| PD | Power Dissipation | 75 | W | |||
| Tj | Junction Temperature | -30 | 150 | |||
| Tstg | Storage Temperature | -30 | 150 | |||
| RθJA | Thermal Resistance From Junction To Ambient | 100 | /W | |||
| RθJC | Thermal Resistance From Junction To Case | 1.67 | /W | |||
| ELECTRICAL CHARACTERISTICS (Ta=25 unless otherwise specified) | ||||||
| V(BR)DSS | Drain-Source breakdown Voltage | VGS=0V,ID=250µA | 60 | V | ||
| IDSS | Zero gate voltage drain current | VDS=48V,VGS=0V, TJ=25 | 1 | µA | ||
| TJ=125 | 100 | µA | ||||
| IGSS | Gate-body leakage current | VDS=0V,VGS=±20V | ±100 | nA | ||
| VGS(th) | Gate-threshold voltage | VDS=VGS,ID=250µA | 1.0 | 1.6 | 2.5 | V |
| RDS(on) | Non-triggering gate voltage | VGS=4.5V,ID=10A | 17 | 19 | mΩ | |
| VGS=10V,ID=20A | 13 | 16 | mΩ | |||
| VSD | Drain-Source diode forward Voltage | VGS=0V,IS=1.0A | 1.2 | V | ||
| IS | Continuous drain-source diode forward current | 50 | A | |||
2411220545_JUXING-50N06_C22440675.pdf
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