Power MOSFET JUXING 50N06 N Channel 60V 50A Low On Resistance TO 252 Package

Key Attributes
Model Number: 50N06
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
50A
RDS(on):
19mΩ@4.5V
Operating Temperature -:
-30℃~+150℃@(Tj)
Gate Threshold Voltage (Vgs(th)):
2.5V@250uA
Type:
N-Channel
Number:
1 N-channel
Pd - Power Dissipation:
75W
Mfr. Part #:
50N06
Package:
TO-252
Product Description

Product Overview

The 50N06 is an N-Channel Mode Power MOSFET designed for power switching applications. It offers low on-resistance characteristics at various gate-source voltages and features a continuous drain current capability of 50A with a drain-source voltage of 60V. This MOSFET is packaged in a TO-252-2L package.

Product Attributes

  • Brand: trr-jx.com
  • Product ID: 50N06
  • Package: TO-252
  • Channel Mode: N-Channel

Technical Specifications

Symbol Parameter Test conditions Min Typ Max Unit
MAXIMUM RATINGS (Ta=25 unless otherwise noted)
VDS Drain-Source Voltage 60 V
VGS Gate-Source Voltage ±20 V
ID Continuous Drain Current 50 A
IDM Pulsed Drain Current 200 A
PD Power Dissipation 75 W
Tj Junction Temperature -30 150
Tstg Storage Temperature -30 150
RθJA Thermal Resistance From Junction To Ambient 100 /W
RθJC Thermal Resistance From Junction To Case 1.67 /W
ELECTRICAL CHARACTERISTICS (Ta=25 unless otherwise specified)
V(BR)DSS Drain-Source breakdown Voltage VGS=0V,ID=250µA 60 V
IDSS Zero gate voltage drain current VDS=48V,VGS=0V, TJ=25 1 µA
TJ=125 100 µA
IGSS Gate-body leakage current VDS=0V,VGS=±20V ±100 nA
VGS(th) Gate-threshold voltage VDS=VGS,ID=250µA 1.0 1.6 2.5 V
RDS(on) Non-triggering gate voltage VGS=4.5V,ID=10A 17 19
VGS=10V,ID=20A 13 16
VSD Drain-Source diode forward Voltage VGS=0V,IS=1.0A 1.2 V
IS Continuous drain-source diode forward current 50 A

2411220545_JUXING-50N06_C22440675.pdf

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