TrenchFET Technology P Channel 20 Volt MOSFET KUU KSI2301CDS T1 GE3 for Power Management Solutions
Key Attributes
Model Number:
KSI2301CDS-T1-GE3
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
3A
RDS(on):
115mΩ@2.5V
Operating Temperature -:
-
Gate Threshold Voltage (Vgs(th)):
1V@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
68pF@16V
Number:
1 P-Channel
Input Capacitance(Ciss):
589pF@16V
Pd - Power Dissipation:
1.25W
Gate Charge(Qg):
10nC@4.5V
Mfr. Part #:
KSI2301CDS-T1-GE3
Package:
SOT-23-3L
Product Description
Product Overview
This P-Channel 20-V (D-S) MOSFET features TrenchFET technology for enhanced performance. It is ideal for load switching in portable devices and DC/DC converters, offering efficient power management.
Product Attributes
- Brand: Not specified
- Origin: Not specified
- Material: Not specified
- Color: Not specified
- Certifications: Not specified
Technical Specifications
| Parameter | Symbol | Test Condition | Min | Typ | Max | Unit |
| Drain-Source Voltage | VDS | -20 | V | |||
| Gate-Source Voltage | VGS | ±12 | V | |||
| Continuous Drain Current | ID | -3 | A | |||
| Pulsed Diode Current | IDM | -15 | A | |||
| Continuous Source-Drain Current(Diode Conduction) | IS | -0.8 | A | |||
| Power Dissipation | PD | 1.25 | W | |||
| Thermal Resistance from Junction to Ambient (t≤5s) | RθJA | 150 | °C/W | |||
| Operating Junction Temperature | TJ | 150 | °C | |||
| Storage Temperature | TSTG | -55 | +150 | °C | ||
| Static Drain-source breakdown voltage | V(BR)DSS | VGS = 0V, ID = -250µA | -20 | V | ||
| Gate-source threshold voltage | VGS(th) | VDS =VGS, ID = -250µA | -0.4 | -1. | V | |
| Gate-source leakage | IGSS | VDS =0V, VGS = ±12V | ±100 | nA | ||
| Zero gate voltage drain current | IDSS | VDS = -20V, VGS =0V | -1 | µA | ||
| Drain-source on-state resistance | RDS(on) | VGS = -4.5V, ID = -2.8A | 66 | 90 | mΩ | |
| Drain-source on-state resistance | RDS(on) | VGS = -2.5V, ID = -2A | 83 | 115 | mΩ | |
| Forward transconductance | gfs | VDS = -4.5V, ID = -3A | 4 | S | ||
| Diode forward voltage | VSD | IS=-1A,VGS=0V | -0.8 | -1.3 | V | |
| Input capacitance | Ciss | VDS = -16V,VGS =0V, f=1MHz | 589 | pF | ||
| Output capacitance | Coss | VDS = -16V,VGS =0V, f=1MHz | 92 | pF | ||
| Reverse transfer capacitance | Crss | VDS = -16V,VGS =0V, f=1MHz | 68 | pF | ||
| Total gate charge | Qg | VDS = -16V,VGS = -4.5V, ID =-3A | 5.5 | 10 | nC | |
| Gate-source charge | Qgs | VDS = -16V,VGS = -4.5V, ID =-3A | 0.8 | nC | ||
| Gate-drain charge | Qg | VDS = -16V,VGS = -4.5V, ID =-3A | 1.3 | nC | ||
| Gate resistance | Rg | f=1MHz | 6 | Ω | ||
| Turn-on delay time | td(on) | VDD= -10V RL=6Ω, ID ≈ -3A, VGEN= -4.5V,Rg=6Ω | 10 | 20 | ns | |
| Rise time | tr | VDD= -10V RL=6Ω, ID ≈ -3A, VGEN= -4.5V,Rg=6Ω | 35 | 60 | ns | |
| Turn-off delay time | td(off) | VDD= -10V RL=6Ω, ID ≈ -3A, VGEN= -4.5V,Rg=6Ω | 30 | 50 | ns | |
| Fall time | tf | VDD= -10V RL=6Ω, ID ≈ -3A, VGEN= -4.5V,Rg=6Ω | 10 | 20 | ns | |
| Continuous Source-Drain Diode Current | IS | Tc=25°C | -1.3 | A | ||
| Pulsed Diode forward Current | ISM | Tc=25°C | -20 | A |
2409300604_KUU-KSI2301CDS-T1-GE3_C2891682.pdf
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