N Channel MOSFET JUXING 20N03 featuring low RDSon and high current rating for power applications
Key Attributes
Model Number:
20N03
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
20A
Operating Temperature -:
-55℃~+150℃@(Tj)
RDS(on):
25mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
1.2V@250uA
Type:
N-Channel
Number:
1 N-channel
Pd - Power Dissipation:
35W
Mfr. Part #:
20N03
Package:
TO-252
Product Description
Product Overview
The 20N03 is an N-Channel Mode Power MOSFET featuring a high-density cell design for ultra-low RDS(on). It is designed for power switching applications.
Product Attributes
- Brand: trr-jx (implied by URL)
- Origin: Not specified
- Material: Not specified
- Color: Not specified
- Certifications: Not specified
Technical Specifications
| Parameter | Symbol | Test Conditions | Min | Typ | Max | Unit |
| Drain-Source Voltage | VDS | 30 | V | |||
| Gate-Source Voltage | VGS | 12 | V | |||
| Continuous Drain Current | ID | TC=25,TJ=150 | 20 | A | ||
| Power Dissipation | PD | 35 | W | |||
| Junction Temperature | Tj | 150 | ||||
| Storage Temperature | Tstg | -55 | 150 | |||
| Thermal Resistance Junction To Ambient | RJA | 62.7 | /W | |||
| Drain-Source breakdown Voltage | BVDSS | VGS=0V,ID=250A | 30 | V | ||
| Drain-Source diode forward Voltage | VSD | VGS=0V,IS=1.0A | 0.5 | 1.0 | V | |
| Zero gate voltage drain current | IDSS | VDS=24V,VGS=0V | 1.0 | A | ||
| Gate-body leakage current | IGSS | VDS=0V,VGS=12V | 100 | nA | ||
| Gate-threshold voltage | VGS(th) | VDS=VGS,ID=250A | 0.9 | 1.0 | 1.2 | V |
| Static Drain-Source On-Resistance | RDS(on) | VGS=10V,ID=5.8A | 18 | 20 | m | |
| Static Drain-Source On-Resistance | RDS(on) | VGS=4.5V,ID=5.8A | 21 | 25 | m | |
| Forward tranconductance | gFS | VDS=5V,ID=5A | 8 | S |
Package: TO-252
Package Marking and Ordering Information: 20N03
Application: Power switching application
Features: High density cell design for ultra low RDS(on)
2409302301_JUXING-20N03_C22440680.pdf
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