130A 150V N CHANNEL MOSFET KIA Semicon Tech KNP2915A Ideal for Battery Management and Motor Drives
Key Attributes
Model Number:
KNP2915A
Product Custom Attributes
Drain To Source Voltage:
150V
Current - Continuous Drain(Id):
130A
Operating Temperature -:
-55℃~+150℃
RDS(on):
10mΩ@10V,50A
Gate Threshold Voltage (Vgs(th)):
3V
Number:
1 N-channel
Input Capacitance(Ciss):
3.56nF
Pd - Power Dissipation:
428W
Gate Charge(Qg):
70nC@10V
Mfr. Part #:
KNP2915A
Package:
TO-220
Product Description
Product Overview
The KNX2915A is a 130A, 150V N-CHANNEL MOSFET from KIA SEMICONDUCTORS. It features extremely low on-resistance (RDS(ON)= 10m typ.) due to CRM(CQ) advanced Trench technology, offering an excellent QgxRDS(on) product (FOM). This MOSFET is qualified according to JEDEC criteria and is suitable for applications such as motor control and drive, battery management, and Uninterrupible Power Supplies (UPS).
Product Attributes
- Brand: KIA
- Origin: KIA SEMICONDUCTORS
- Package: TO-220
Technical Specifications
| Parameter | Symbol | Conditions | Min | Typ | Max | Units |
| Absolute Maximum Ratings (TC=25 C unless otherwise specified) | ||||||
| Drain-to-Source Voltage | VDSS | 150 | V | |||
| Continuous Drain Current | ID | TC=25 C (Silicon limited) | 130 | A | ||
| TC=25 C (Package limited) | 160 | A | ||||
| TC=100 C (Silicon limited) | 80 | A | ||||
| Pulsed drain current | IDP | (TC = 25C, tp limited by Tjmax) | 500 | A | ||
| Avalanche energy, single pulse | EAS | (L=0.5mH, Rg=25) | 272 | mJ | ||
| Gate-Source voltage | VGS | 25 | V | |||
| Power dissipation | Ptot | (TC = 25 C) | 428 | W | ||
| Junction & Storage Temperature Range | TJ& TSTG | -55 | 150 | C | ||
| Thermal Characteristics | ||||||
| Thermal resistance, junction-ambient | RJA | 0.29 | C/W | |||
| Thermal resistance, Junction-case | RJC | 0.2 | C/W | |||
| Electrical Characteristics (TJ=25C, unless otherwise noted) | ||||||
| Drain-source breakdown voltage | BVDSS | VGS=0V,ID=250A | 150 | V | ||
| Zero Gate Voltage Drain Current | IDSS | VDS=150V , VGS=0V ,Tj=25 C | 0.05 | 1 | A | |
| VDS=150V , VGS=0V, Tj=150 C | 20 | A | ||||
| Gate threshold voltage | VGS(th) | VDS=VGS, ID=250A | 3 | 4 | 5 | V |
| Gate leakage current | IGSS | VGS=25V,VDS=0V | 100 | nA | ||
| Drain-source on-resistance | RDS(on) | VGS=10V,ID=50A, Tj=25 C | 10 | 15 | m | |
| VDS=4.5V,ID=25A, Tj=150 C | 22 | 27 | m | |||
| Forward Transconductance | gfs | VDS=5V,ID=50A | 100 | S | ||
| Dynamic Characteristics | ||||||
| Gate Resistance | RG | VGS=0V,VDS=0V Frequency=1MHz | 1.5 | |||
| Input capacitance | Ciss | VDS=0V,VGS=75V, F=1MHz | 3560 | pF | ||
| Output capacitance | Coss | 330 | pF | |||
| Reverse transfer capacitance | Crss | 90 | pF | |||
| Turn-on delay time | td(on) | VDD=75V,ID=50A, VGS=10V,RG=2.7 | 18 | ns | ||
| Rise time | tr | 92 | ns | |||
| Turn-off delay time | td(off) | 35 | ns | |||
| Fall time | tf | 70 | ns | |||
| Gate Charge Characteristics | ||||||
| Total gate charge | Qg | VDS=75V,ID=50A, VGS=10V, F=1MHz | 70 | nC | ||
| Gate-source charge | Qgs | 24 | nC | |||
| Gate-drain charge | Qg d | 25 | nC | |||
| Diode Characteristics | ||||||
| Diode forward voltage | VSD | VGS=0V,ISD=30A | 1.3 | V | ||
| Reverse recovery time | trr | IF=50A DlF/dt=100A/s | 70 | ns | ||
| Reverse recovery charge | Qrr | 233 | nC | |||
2409302333_KIA-Semicon-Tech-KNP2915A_C455990.pdf
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