Load Switching P Channel MOSFET JUXING AO3401 with Low RDSon and High Power Dissipation Capability

Key Attributes
Model Number: AO3401
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
4.2A
RDS(on):
65mΩ@10V
Operating Temperature -:
-50℃~+150℃
Gate Threshold Voltage (Vgs(th)):
700mV
Reverse Transfer Capacitance (Crss@Vds):
77pF
Number:
1 P-Channel
Pd - Power Dissipation:
350mW
Input Capacitance(Ciss):
954pF
Mfr. Part #:
AO3401
Package:
SOT-23
Product Description

Product Overview

The AO3401 is a P-Channel Enhancement Mode MOSFET designed for high-density cell applications, offering extremely low RDS(on) and exceptional on-resistance and maximum DC current capability. It is suitable for load/power switching and interfacing switching applications.

Product Attributes

  • Package: SOT-23
  • Epoxy Flammability Rating: UL 94V-0
  • Mounting Position: Any

Technical Specifications

ParametersSymbolTest ConditionMinTypMaxUnit
Maximum Ratings & Thermal Characteristics (TA = 25 unless otherwise specified)
Drain-Source VoltageVDS-30V
Gate-Source VoltageVGS12V
Continuous Drain CurrentID-4.2A
Power DissipationPD350mW
Junction TemperatureTj150
Storage TemperatureTstg-50+150
Thermal Resistance From Junction to Ambient (note 2)RJA357/W
Electrical Characteristics (TA = 25 unless otherwise specified)
Off characteristics
Drain-Source Breakdown VoltageV(BR)DSSVGS=0V, ID=-250uA-30V
Zero Gate Voltage Drain currentIDSSVDS=-24V, VGS=0V-1uA
Gate-body LeakageIGSSVDS=12V, VDS=0V100nA
On characteristics
Drain-Source On-ResistanceRDS(ON)VGS=-10V, ID=-4.2A5065m
VGS=-4.5V, ID=-4A6075
VGS=-2.5V, ID=-1A7590
Forward trans conductancegfsVDS=-5V, ID=-5A7S
Gate-Threshold voltage*VGS (th)VDS=VGS, ID=-250uA-0.7-0.9-1.3V
Dynamic characteristics (note 2)
Input capacitanceCissVDS=-15V, VGS=0V,f=1MHz954pF
Output capacitanceCoss115
Reverse Transfer capacitanceCrss77
Switching characteristics (note 2)
Turn-on Timetd(on)VGS=-10V, RL=3.6, VDS=-15V, RGEN=66.3ns
Rise timetr3.2
Turn-off Timetd(off)38.2
Fall timetf12
Drain-source diode characteristics and maximum ratings
Diode forward voltageVSDIS=-1A, VGS=0V-1.0V

2409291733_JUXING-AO3401_C5243887.pdf

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