switching JUXING 15N10 N Channel MOSFET with high drain current and low gate charge characteristics
Key Attributes
Model Number:
15N10
Product Custom Attributes
Configuration:
-
Drain To Source Voltage:
100V
Current - Continuous Drain(Id):
14.7A
Operating Temperature -:
-55℃~+150℃
RDS(on):
110mΩ@10V
Gate Threshold Voltage (Vgs(th)):
3V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
23pF
Number:
1 N-channel
Input Capacitance(Ciss):
-
Output Capacitance(Coss):
-
Pd - Power Dissipation:
34.7W
Gate Charge(Qg):
24nC@10V
Mfr. Part #:
15N10
Package:
TO-252
Product Description
Product Overview
The 15N10 is an N-Channel Mode Power MOSFET designed for power switching applications. It offers high switching speed with low gate charge and low CRSS, making it suitable for efficient power conversion.
Product Attributes
- Brand: Not Specified
- Origin: Not Specified
- Material: Not Specified
- Color: Not Specified
- Certifications: Not Specified
Technical Specifications
| Parameter | Symbol | Test Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| MAXIMUM RATINGS | VDS | Drain-Source Voltage | 100 | V | ||
| VGS | Gate-Source Voltage | ±20 | V | |||
| ID | Continuous Drain Current (TC=25) | 14.7 | A | |||
| IDM | Pulsed Drain Current | 59 | A | |||
| PD | Power Dissipation (TC=25) | 34.7 | W | |||
| Tj | Junction Temperature | -55 | to | 150 | ||
| ELECTRICAL CHARACTERISTICS | BVDSS | Drain-Source Breakdown Voltage (VGS=0V, ID=250µA) | 100 | V | ||
| VSD | Drain-Source Diode Forward Voltage (VGS=0V, IS=8.0A) | 1.0 | 1.2 | V | ||
| IDSS | Zero Gate Voltage Drain Current (VDS=80V, VGS=0V) | 1 | µA | |||
| IGSS | Gate-Body Leakage Current (VDS=0V, VGS=±20V) | ±100 | nA | |||
| VGS(th) | Gate-Threshold Voltage (VDS=VGS, ID=250µA) | 1.0 | 3.0 | V | ||
| RDS(on) | Static Drain-Source On-Resistance (VGS=10V, ID=1.0A) | 95 | 110 | mΩ | ||
| DYNAMIC PARAMETERS | gfs | Forward Transconductance (VDS=40V, ID=3.5A) | 5 | S | ||
| CRSS | Reverse Transfer Capacitance (VDS=15V, VGS=0V, f=1MHz) | 23 | pF | |||
| QG | Total Gate Charge (VDS=80V, VGS=10V, ID=10A) | 24 | nC | |||
| THERMAL RESISTANCE | RθJA | From Junction To Ambient | 62.5 | Ω/W | ||
| RθJC | From Junction To Case | 3.6 | Ω/W |
2409302301_JUXING-15N10_C22440681.pdf
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