Low RDS ON N-Channel MOSFET JUXING 2N7002K suitable for voltage controlled switching and load switch
Key Attributes
Model Number:
2N7002K
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
340mA
RDS(on):
5Ω@10V,200mA
Operating Temperature -:
-50℃~+150℃
Gate Threshold Voltage (Vgs(th)):
2.5V
Reverse Transfer Capacitance (Crss@Vds):
10pF@10V
Number:
1 N-channel
Input Capacitance(Ciss):
40pF@10V
Pd - Power Dissipation:
350mW
Mfr. Part #:
2N7002K
Package:
SOT-23
Product Description
Product Overview
The 2N7002K is a high-density N-Channel MOSFET designed for low RDS(ON) and voltage-controlled small signal switching. It offers ruggedness, reliability, and high saturation current capability, with built-in ESD protection. This MOSFET is ideal for load switch applications in portable devices and DC/DC converters.
Product Attributes
- Package: SOT-23
- Flammability Rating: Epoxy UL 94V-0
- Mounting Position: Any
- Brand: (Not specified)
- Origin: (Not specified)
- Material: (Not specified)
- Color: (Not specified)
- Certifications: (Not specified)
Technical Specifications
| Parameter | Symbol | Test Condition | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| Maximum Ratings & Thermal Characteristics (TA = 25 unless otherwise specified) | ||||||
| Drain-Source Voltage | VDS | 60 | V | |||
| Gate-Source Voltage | VGS | ±20 | V | |||
| Continuous Drain Current | ID | 340 | mA | |||
| Power Dissipation | PD | 350 | mW | |||
| Junction Temperature | Tj | 150 | ||||
| Storage Temperature | Tstg | -50 | +150 | |||
| Thermal Resistance Junction to Ambient | RθJA | 357 | /W | |||
| Electrical Characteristics (TA = 25 unless otherwise specified) | ||||||
| Drain-Source Breakdown Voltage | VDS | VGS=0V, ID=250uA | 60 | V | ||
| Gate-Threshold Voltage* | Vth(GS) | VDS=VGS, ID=1mA | 1 | 1.3 | 2.5 | V |
| Gate-body Leakage | IGSS | VDS=0V, VGS=±20V | ±10 | uA | ||
| Gate-body Leakage | IGSS | VDS=0V, VGS=±10V | ±200 | nA | ||
| Gate-body Leakage | IGSS | VDS=0V, VGS=±5V | ±100 | nA | ||
| Zero Gate Voltage Drain Current | IDSS | VDS=48V, VGS=0V | 1 | uA | ||
| Drain-Source On-Resistance* | RDS(ON) | VGS=10V, ID=500mA | 0.9 | 5 | Ω | |
| Drain-Source On-Resistance* | RDS(ON) | VGS=4.5V, IC=200mA | 1.1 | 5.3 | Ω | |
| Diode Forward Voltage | VSD | IS=300mA, VGS=0V | 1.50 | V | ||
| Input Capacitance** | Ciss | VDS=10V, VGS=0V,f=1MHz | 40 | pF | ||
| Output Capacitance** | Coss | VDS=10V, VGS=0V,f=1MHz | 30 | pF | ||
| Reverse Transfer Capacitance** | Crss | VDS=10V, VGS=0V,f=1MHz | 10 | pF | ||
| SWITCHING TIME | ||||||
| Turn-on Time** | td(on) | VDD=50V, RL=250Ω, VGS=10V, RGS=50Ω, RG=50Ω | 10 | ns | ||
| Turn-off Time** | td(off) | VDD=50V, RL=250Ω, VGS=10V, RGS=50Ω, RG=50Ω | 15 | ns | ||
| Reverse recovery Time | trr | VGS=0V, IS=300mA, VR=25V, Dis/dt=-100a/uS | 30 | ns | ||
| GATE-SOURCE ZENER DIODE | ||||||
| Gate-Source Breakdown Voltage | BVGSO | Igs=±1mA(Open Drain) | ±21.5 | ±30 | V | |
2411220257_JUXING-2N7002K_C5243891.pdf
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