Portable Device Power Management Using JUXING JX8205AA N Channel Enhancement Mode MOSFET Technology
Key Attributes
Model Number:
JX8205AA
Product Custom Attributes
Configuration:
-
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
4A
Operating Temperature -:
-55℃~+150℃
RDS(on):
33mΩ@2.5V
Gate Threshold Voltage (Vgs(th)):
1V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
10pF@10V
Number:
2 N-Channel
Input Capacitance(Ciss):
89pF@10V
Pd - Power Dissipation:
1.9W
Gate Charge(Qg):
-
Mfr. Part #:
JX8205AA
Package:
SOT-23-6
Product Description
Product Overview
The JX8205AA is an N-Channel Enhancement Mode MOSFET designed for high power and current handling capabilities. This lead-free product is suitable for various battery protection and power management applications in portable electronic devices.
Product Attributes
- Brand: JX
- Package: SOT23-6
- Certifications: Lead free product is acquired
Technical Specifications
| Parameter | Symbol | Test Conditions | Min. | Typ. | Max. | Units |
| Drain to Source Breakdown Voltage | V(BR)DSS | ID = 250A, VGS = 0V | 20 | 22 | V | |
| Zero-Gate Voltage Drain Current | IDSS | VDS = 19V, VGS = 0V | 1 | A | ||
| Gate-Body Leakage Current | IGSS | VGS = 10V, VDS = 0V | 100 | nA | ||
| Gate Threshold Voltage | VGS(th) | VDS=VGS, IDS=250A | 0.4 | 0.6 | 1.0 | V |
| Drain to Source On-State Resistance | RDS(on) | ID = 4A, VGS = 4.5V | 21.0 | 27 | m | |
| Drain to Source On-State Resistance | RDS(on) | ID = 3A, VGS = 2.5V | 25.5 | 33 | m | |
| Input Capacitance | Ciss | VGS=0V, VDS=10V, Frequency=1.0MHz | 370 | pF | ||
| Output Capacitance | Coss | VGS=0V, VDS=10V, Frequency=1.0MHz | 89 | pF | ||
| Reverse Transfer Capacitance | Crss | VGS=0V, VDS=10V, Frequency=1.0MHz | 10 | pF | ||
| Turn-ON Delay Time | td(on) | VDD = 10V, ID = 3A, VGS = 4.5V, RGEN = 10 | 200 | ns | ||
| Turn-ON Rise Time | tr | VDD = 10V, ID = 3A, VGS = 4.5V, RGEN = 10 | 236 | ns | ||
| Turn-OFF Delay Time | td(off) | VDD = 10V, ID = 3A, VGS = 4.5V, RGEN = 10 | 36 | ns | ||
| Turn-ON Fall Time | tf | VDD = 10V, ID = 3A, VGS = 4.5V, RGEN = 10 | 165 | ns | ||
| Total Gate Charge | Qg | VDS = 10V, VGS = 4.5V, ID = 1A | 7.5 | nC | ||
| Gate-Source Charge | Qgs | VDS = 10V, VGS = 4.5V, ID = 1A | 3.0 | nC | ||
| Gate-Drain Charge | Qg | VDS = 10V, VGS = 4.5V, ID = 1A | 1.5 | nC | ||
| Diode Forward Voltage | VSD | IS = 4A, VGS = 0V | 0.4 | 1.2 | V | |
| Drain to Source Voltage | VDSS | 20 | V | |||
| Gate to Source Voltage | VGSS | 10 | V | |||
| Drain Current-Continuous | ID | 4 | A | |||
| Drain Current (Pulse) | IDM | 20 | A | |||
| Maximum Power Dissipation | PD | 1.9 | W | |||
| Operating Junction and Storage Temperature Range | TjTstg | -55 | +150 | |||
| Lead Temperature for Soldering Purposes | TL | (1/8 from case for 10 s) | 260 |
2410121452_JUXING-JX8205AA_C19632410.pdf
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