power MOSFET KUU K15N20 for DC DC converters featuring lead free design and low gate to drain charge
Key Attributes
Model Number:
K15N20
Product Custom Attributes
Drain To Source Voltage:
200V
Current - Continuous Drain(Id):
17A
RDS(on):
165mΩ@10V
Operating Temperature -:
-55℃~+175℃
Gate Threshold Voltage (Vgs(th)):
5.5V@250uA
Type:
N-Channel
Output Capacitance(Coss):
170pF
Input Capacitance(Ciss):
910pF
Mfr. Part #:
K15N20
Package:
TO-252
Product Description
Product Overview
High-frequency DC-DC converters are ideal applications for this SMPS Power MOSFET. It offers lead-free benefits and features low gate-to-drain charge to reduce switching losses. The fully characterized capacitance, including effective Coss, simplifies design. Avalanche voltage and current are also fully characterized.
Product Attributes
- Brand: Not specified
- Origin: Not specified
- Material: Not specified
- Color: Not specified
- Certifications: Not specified
Technical Specifications
| Parameter | Min. | Typ. | Max. | Units | Conditions |
| Absolute Maximum Ratings | |||||
| Continuous Drain Current, ID @ TC = 25C (VGS @ 10V) | 17 | A | |||
| Continuous Drain Current, ID @ TC = 100C (VGS @ 10V) | 12 | A | |||
| Pulsed Drain Current, IDM | 68 | A | |||
| Power Dissipation, PD @TC = 25C | 140 | W | |||
| Power Dissipation*, PD @TA = 25C | 3.0 | W | |||
| Linear Derating Factor | 0.96 | W/C | |||
| Gate-to-Source Voltage, VGS | 30 | V | |||
| Peak Diode Recovery dv/dt, dv/dt | 8.3 | V/ns | |||
| Operating Junction and Storage Temperature Range, TJ, TSTG | -55 | +175 | C | ||
| Soldering Temperature, for 10 seconds | 300 | C | (1.6mm from case ) | ||
| Thermal Resistance | |||||
| Junction-to-Case, RJC | 1.04 | C/W | |||
| Junction-to-Ambient (PCB mount)*, RJA | 50 | C/W | |||
| Junction-to-Ambient, RJA | 110 | C/W | TO-252 | ||
| Static @ TJ = 25C (unless otherwise specified) | |||||
| Drain-to-Source Breakdown Voltage, V(BR)DSS | 200 | V | VGS = 0V, ID = 250A | ||
| Breakdown Voltage Temp. Coefficient, V(BR)DSS/TJ | 0.26 | V/C | Reference to 25C, ID = 1mA | ||
| Static Drain-to-Source On-Resistance, RDS(on) max | 0.165 | VGS = 10V, ID = 10A | |||
| Gate Threshold Voltage, VGS(th) | 3.0 | 5.5 | V | VDS = VGS, ID = 250A | |
| Drain-to-Source Leakage Current, IDSS | 25 | A | VDS = 200V, VGS = 0V | ||
| Drain-to-Source Leakage Current, IDSS | 250 | A | VDS = 160V, VGS = 0V, TJ = 150C | ||
| Gate-to-Source Forward Leakage, IGSS | 100 | nA | VGS = 30V | ||
| Gate-to-Source Reverse Leakage, IGSS | -100 | nA | VGS = -30V | ||
| Dynamic @ TJ = 25C (unless otherwise specified) | |||||
| Forward Transconductance, gfs | 4.0 | S | V DS = 50V, ID = 10A | ||
| Total Gate Charge, Qg | 27 | 41 | nC | ID = 10A, VDS = 160V, VGS = 10V | |
| Gate-to-Source Charge, Qgs | 6.9 | 10 | nC | ||
| Gate-to-Drain ("Miller") Charge, Qgd | 14 | 21 | nC | ||
| Turn-On Delay Time, td(on) | 9.7 | ns | VDD = 100V, ID = 10A, RG = 6.8, VGS = 10V | ||
| Rise Time, tr | 32 | ns | |||
| Turn-Off Delay Time, td(off) | 17 | ns | |||
| Fall Time, tf | 8.9 | ns | |||
| Input Capacitance, Ciss | 910 | pF | VGS = 0V, VDS = 25V | ||
| Output Capacitance, Coss | 170 | pF | |||
| Reverse Transfer Capacitance, Crss | 31 | pF | |||
| Output Capacitance, Coss | 1380 | pF | VGS = 0V, VDS = 1.0V, = 1.0MHz | ||
| Output Capacitance, Coss | 67 | pF | VGS = 0V, VDS = 160V, = 1.0MHz | ||
| Effective Output Capacitance, Coss eff. | 150 | pF | VGS = 0V, VDS = 0V to 160V | ||
| Avalanche Characteristics | |||||
| Single Pulse Avalanche Energy, EAS | 260 | mJ | |||
| Avalanche Current, IAR | 10 | A | |||
| Repetitive Avalanche Energy, EAR | 14 | mJ | |||
| Diode Characteristics | |||||
| Continuous Source Current (Body Diode), IS | 17 | A | MOSFET symbol showing the integral reverse p-n junction diode. | ||
| Pulsed Source Current (Body Diode), ISM | 68 | A | |||
| Diode Forward Voltage, VSD | 1.5 | V | TJ = 25C, IS = 10A, VGS = 0V | ||
| Reverse Recovery Time, trr | 130 | 200 | ns | TJ = 25C, IF = 10A, di/dt = 100A/s | |
| Reverse Recovery Charge, Qrr | 610 | 920 | nC | ||
2505071457_KUU-K15N20_C48686195.pdf
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