N Channel Power MOSFET KIA Semicon Tech KND2803C 150A 30V with Low Static Drain Source On Resistance
Key Attributes
Model Number:
KND2803C
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
150A
Operating Temperature -:
-55℃~+150℃
RDS(on):
2.4mΩ@10V;3.2mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
1.5V
Reverse Transfer Capacitance (Crss@Vds):
380pF
Output Capacitance(Coss):
445pF
Input Capacitance(Ciss):
3.48nF
Gate Charge(Qg):
80nC@10V
Mfr. Part #:
KND2803C
Package:
TO-252
Product Description
150A, 30V N-Channel Power MOSFET
This advanced trench technology N-Channel Power MOSFET offers high performance with a low RDS(ON) of 2.4m (typ.) at VGS=10V and super low gate charge. It is designed for efficient power management applications and features excellent CdV/dt effect decline, 100% Vds TESTED, and 100% UIS TESTED. A green device is available.
Product Attributes
- Brand: KIA SEMICONDUCTORS
- Part Number: KND2803C
- Package: TO-252
- Origin: KIA SEMICONDUCTORS
Technical Specifications
| Parameter | Symbol | Conditions | Min. | Typ. | Max. | Unit |
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V, ID=250uA | 30 | - | - | V |
| VDS=30V,VGS=0V,TC=25C | - | - | 1 | uA | ||
| Gate-Source Leakage Current | IGSS | VGS=20V, VDS=0V | - | - | 100 | nA |
| Gate Threshold Voltage | VGS(th) | VGS=VDS, ID=250uA | 1.0 | 1.5 | 2.5 | V |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=10V, ID=30A | - | 2.4 | 3.0 | m |
| VGS=4.5V, ID=20A | - | 3.2 | 4.2 | m | ||
| Gate Resistance | Rg | VDS=0V, VGS=0V,f=1.0MHz | - | 1.7 | - | |
| Capacitance | Ciss | VDS=15V, VGS=0V , f=1.0MHz | - | 3480 | - | pF |
| Coss | - | - | 445 | - | pF | |
| Crss | - | - | 380 | - | pF | |
| Switching Time | td(on) | VDS=15V, VGS=10V, RG=2.0, ID=20A | - | 9.5 | - | ns |
| tr | - | - | 18 | - | ns | |
| td(off) | - | - | 50 | - | ns | |
| tf | - | - | 17.5 | - | ns | |
| Gate Charge | Qg | VDS=15V, VGS=10V , ID=30A | - | 80 | - | nC |
| Qgs | - | - | 4.5 | - | nC | |
| Qgd | - | - | 30 | - | nC | |
| Body Diode | ISD | - | - | - | 150 | A |
| VSD | VGS=0V, ISD=30A,TJ=25C | - | - | 1.2 | V | |
| Reverse Recovery | trr | TJ=25C, IF=30A, di/dt=100A/s | - | 18 | - | nS |
| Reverse Recovery Charge | Qrr | - | - | 6.8 | - | nC |
Absolute Maximum Ratings
| Parameter | Symbol | Ratings | Unit |
| Drain-to-Source Voltage (VGS=0V | VDS | 30 | V |
| Gate-to-Source Voltage (VDS=0V | VGS | 20 | V |
| Continuous Drain Current | ID | 150 (TC=25C) | A |
| ID | 95 (TC=100C) | A | |
| Pulsed Drain Current | IDM | 640 | A |
| Total Power Dissipation (TC=25C) | PD | 136 | W |
| Avalanche Energy | EAS | 342 | mJ |
| Operation Junction and Storage Temperature Range | TJ,TSTG | -55 to 150 | C |
Thermal Characteristics
| Parameter | Symbol | Max. | Unit |
| Thermal Resistance, Junction-to-Case | RJC | 1.1 | C/W |
2509041415_KIA-Semicon-Tech-KND2803C_C51883044.pdf
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