KEC KDS120-RTK P Silicon Epitaxial Diode for Ultra High Speed Switching Featuring Low Forward Voltage
Product Overview
The KDS120 is a silicon epitaxial type diode designed for ultra-high-speed switching applications. It features a small USM package, low forward voltage (0.92V Typ.), fast reverse recovery time (1.6ns Typ.), and small total capacitance (2.2pF Typ.).
Product Attributes
- Type: Silicon Epitaxial Type Diode
- Application: Ultra High Speed Switching
Technical Specifications
| Characteristic | Symbol | Rating | Unit |
|---|---|---|---|
| Maximum (Peak) Reverse Voltage | VRM | 85 | V |
| Reverse Voltage | VR | 80 | V |
| Maximum (Peak) Forward Current | IFM | 300 * | mA |
| Average Forward Current | IO | 100 * | mA |
| Surge Current (10ms) | IFSM | 2 * | A |
| Power Dissipation | PD | 100 | mW |
| Junction Temperature | Tj | 150 | |
| Storage Temperature Range | Tstg | -55150 |
| Characteristic | Symbol | Test Condition | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Forward Voltage | VF(1) | IF=1mA | - | 0.61 | - | V |
| Forward Voltage | VF(2) | IF=10mA | - | 0.74 | - | V |
| Forward Voltage | VF(3) | IF=100mA | - | 0.92 | 1.20 | V |
| Reverse Current | IR | VR=80V | - | - | 0.5 | A |
| Total Capacitance | CT | VR=0, f=1MHz | - | 2.2 | 4.0 | pF |
| Reverse Recovery Time | trr | IF=10mA | - | 1.6 | 4.0 | nS |
| Dim | MILLIMETERS | USM |
|---|---|---|
| A | 2.00 | 0.20 |
| B | 1.25 | 0.15 |
| C | 0.90 | 0.10 |
| D | 0.3+0.10/-0.05 | 2.10 |
| E | 0.20 | 0.65 |
| G | 0.15+0.1/-0.06 | 1.30 |
| H | 0.00~0.10 | 0.70 |
| J | 0.42 | 0.10 |
| K | 0.10 MIN | - |
| L | 0.1 MAX | - |
| M | +_ | +_ |
| N | +_ | +_ |
| P | +_ | +_ |
Pin Configuration:
1. CATHODE 1
2. CATHODE 2
3. ANODE
Note: * Unit Rating. Total Rating = Unit Rating x 1.5
2411220138_KEC-KDS120-RTK-P_C112693.pdf
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