KEC KDS120-RTK P Silicon Epitaxial Diode for Ultra High Speed Switching Featuring Low Forward Voltage

Key Attributes
Model Number: KDS120-RTK/P
Product Custom Attributes
Reverse Leakage Current (Ir):
500nA@80V
Reverse Recovery Time (trr):
4ns
Operating Junction Temperature Range:
-55℃~+150℃@(Tj)
Voltage - DC Reverse (Vr) (Max):
80V
Diode Configuration:
1 Pair Series Connection
Voltage - Forward(Vf@If):
920mV@100mA
Current - Rectified:
100mA
Mfr. Part #:
KDS120-RTK/P
Package:
USM
Product Description

Product Overview

The KDS120 is a silicon epitaxial type diode designed for ultra-high-speed switching applications. It features a small USM package, low forward voltage (0.92V Typ.), fast reverse recovery time (1.6ns Typ.), and small total capacitance (2.2pF Typ.).

Product Attributes

  • Type: Silicon Epitaxial Type Diode
  • Application: Ultra High Speed Switching

Technical Specifications

Characteristic Symbol Rating Unit
Maximum (Peak) Reverse Voltage VRM 85 V
Reverse Voltage VR 80 V
Maximum (Peak) Forward Current IFM 300 * mA
Average Forward Current IO 100 * mA
Surge Current (10ms) IFSM 2 * A
Power Dissipation PD 100 mW
Junction Temperature Tj 150
Storage Temperature Range Tstg -55150
Characteristic Symbol Test Condition Min. Typ. Max. Unit
Forward Voltage VF(1) IF=1mA - 0.61 - V
Forward Voltage VF(2) IF=10mA - 0.74 - V
Forward Voltage VF(3) IF=100mA - 0.92 1.20 V
Reverse Current IR VR=80V - - 0.5 A
Total Capacitance CT VR=0, f=1MHz - 2.2 4.0 pF
Reverse Recovery Time trr IF=10mA - 1.6 4.0 nS
Dim MILLIMETERS USM
A 2.00 0.20
B 1.25 0.15
C 0.90 0.10
D 0.3+0.10/-0.05 2.10
E 0.20 0.65
G 0.15+0.1/-0.06 1.30
H 0.00~0.10 0.70
J 0.42 0.10
K 0.10 MIN -
L 0.1 MAX -
M +_ +_
N +_ +_
P +_ +_

Pin Configuration:
1. CATHODE 1
2. CATHODE 2
3. ANODE

Note: * Unit Rating. Total Rating = Unit Rating x 1.5


2411220138_KEC-KDS120-RTK-P_C112693.pdf

Contact Our Experts And Get A Free Consultation!

Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.