Ultra high speed switching silicon epitaxial planar diode KEC KDS187-RTK P with small SOT 23 package

Key Attributes
Model Number: KDS187-RTK/P
Product Custom Attributes
Reverse Leakage Current (Ir):
500nA@80V
Reverse Recovery Time (trr):
1.6ns
Operating Junction Temperature Range:
-
Voltage - DC Reverse (Vr) (Max):
80V
Diode Configuration:
Independent
Voltage - Forward(Vf@If):
920mV@100mA
Current - Rectified:
100mA
Mfr. Part #:
KDS187-RTK/P
Package:
SOT-23
Product Description

Product Overview

The KDS187 is a silicon epitaxial planar diode designed for ultra-high-speed switching applications. It features a small SOT-23 package, low forward voltage, fast reverse recovery time, and small total capacitance. The suffix U indicates qualification to AEC-Q101 standards.

Product Attributes

  • Type: SILICON EPITAXIAL PLANAR DIODE
  • Application: ULTRA HIGH SPEED SWITCHING APPLICATION
  • Package: SOT-23
  • Qualification: AEC-Q101 (Suffix U)

Technical Specifications

Characteristic Symbol Test Condition Min. Typ. Max. Unit
Forward Voltage VF(1) IF=1mA - 0.61 - V
Forward Voltage VF(2) IF=10mA - 0.74 - V
Forward Voltage VF(3) IF=100mA - 0.92 1.20 V
Reverse Current IR VR=80V - - 0.5 A
Total Capacitance CT VR=0, f=1MHz - 2.2 4.0 pF
Reverse Recovery Time trr IF=10mA - 1.6 4.0 nS

Maximum Ratings

Characteristic Symbol Rating Unit
Maximum (Peak) Reverse Voltage VRM 85 V
Reverse Voltage VR 80 V
Maximum (Peak) Forward Current IFM 300 mA
Average Forward Current IO 100 mA
Surge Current (10ms) IFSM 2 A
Power Dissipation PD 150 mW
Junction Temperature Tj 150
Storage Temperature Range Tstg -55150

Dimensions (SOT-23)

Dimension Value (mm)
A 2.93
B 0.20
C 1.30+0.20/-0.15
D 0.40+0.15/-0.05
E 2.40+0.30/-0.20
G 1.90
H 0.95
J 0.13+0.10/-0.05
K 0.00 ~ 0.10
L 0.55
M 0.1 MAX
N 0.20 MIN
P 1.00+0.20/-0.10
Q 1.30 MAX

Pin Configuration (SOT-23)

  1. NC
  2. CATHODE
  3. ANODE

2411220042_KEC-KDS187-RTK-P_C294627.pdf

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