Durable P Channel MOSFET KEXIN SI4435DY with Low Gate Body Leakage and High Forward Transconductance
Key Attributes
Model Number:
SI4435DY
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
8.8A
RDS(on):
35mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
1.7V
Type:
P-Channel
Number:
1 P-Channel
Pd - Power Dissipation:
2.5W
Gate Charge(Qg):
60nC@10V
Mfr. Part #:
SI4435DY
Package:
SOP-8
Product Description
Product Overview
The SI4435DY (KI4435DY) is a P-Channel MOSFET designed for various applications. It features a VDS of -30V and low on-state resistance (RDS(on)) of 0.02 at VGS=-10V and 0.035 at VGS=-4.5V, making it suitable for power switching and control circuits.
Product Attributes
- Brand: Kexin
- SMD Type: SOP-8
- Origin: China (implied by www.kexin.com.cn)
Technical Specifications
| Parameter | Symbol | Test Conditions | Min | Typ | Max | Unit |
| Drain-Source Breakdown Voltage | BVDSS | VGS = 0 V, ID = 250 A | -30 | V | ||
| Gate Threshold Voltage | VGS(th) | VDS = VGS , ID = -250uA | -1.0 | -1.7 | -3 | V |
| Gate-Body Leakage | IGSS | VDS = 0V , VGS = 20V | 100 | nA | ||
| Drain-Source On-State Resistance | rDS(on) | VGS = -10V , ID =-8.0A | 0.015 | 0.02 | ||
| Drain-Source On-State Resistance | rDS(on) | VGS = -4.5V , ID = -5.0A | 0.022 | 0.035 | ||
| On-State Drain Current | ID(on) | VGS = -10V , ID = -8.0A | -40 | A | ||
| Forward Transconductance | gfs | VDS = -15V , ID = -8A | 11 | S | ||
| Total Gate Charge | Qg | VDD = -15V , RL = 15 , ID = -1A , VGEN = -10V , RG = 6 | 47 | 60 | nC | |
| Gate-Source Charge | Qgs | VDS = -15V , VGS = -10V , ID = -4.6A | 7.1 | nC | ||
| Gate-Drain Charge | Qg | VDS = -15V , VGS = -10V , ID = -4.6A | 8 | nC | ||
| Turn-On Delay Time | td(on) | 16 | 24 | ns | ||
| Rise Time | tr | 76 | 110 | ns | ||
| Turn-Off Delay Time | td(off) | 130 | 200 | ns | ||
| Fall Time | tf | 90 | 140 | ns | ||
| Source-Drain Reverse Recovery Time | trr | IF = -2.5A , di/dt = 100A/us | 34 | 51 | ns | |
| Continuous Source Current (Diode Conduction) | IS | -2.5 | A | |||
| Diode Forward Voltage | VSD | IS = 2.5 A, VGS = 0 V | -1.2 | V | ||
| Zero Gate Voltage Drain Current | IDSS | VDS = -30V , VGS = 0V | -1 | A | ||
| Zero Gate Voltage Drain Current | IDSS | VDS = -15V , VGS = 0V , TJ =70 | -5 | A |
2410121933_KEXIN-SI4435DY_C382326.pdf
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