Power MOSFET KIA Semicon Tech KNE6303A 12A 30V N Channel with trench technology and low on resistance
Key Attributes
Model Number:
KNE6303A
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
12A
Operating Temperature -:
-55℃~+150℃
RDS(on):
11.5mΩ@4.5V,6A
Gate Threshold Voltage (Vgs(th)):
1.8V
Reverse Transfer Capacitance (Crss@Vds):
145pF
Number:
1 N-channel
Input Capacitance(Ciss):
1.3nF
Pd - Power Dissipation:
3.1W
Gate Charge(Qg):
10nC
Mfr. Part #:
KNE6303A
Package:
SOP-8
Product Description
Product Overview
The KIA SEMICONDUCTORS KNX6303A is a 12A, 30V N-CHANNEL MOSFET featuring advanced trench process technology and a high-density cell design for ultra-low on-resistance. It is fully characterized for avalanche voltage and current, making it suitable for various applications requiring efficient power switching.
Product Attributes
- Brand: KIA SEMICONDUCTORS
- Part Number: KNX6303A
- Package: SOP-8
Technical Specifications
| Parameter | Symbol | Test conditions | Min. | Typ. | Max. | Unit |
| Drain-source breakdown voltage | BVDSS | VGS=0V,ID=250A | 30 | - | - | V |
| Drain-source on-state resistance | RDS(ON) | VGS=4.5V,ID=6A | - | 11.5 | 14.0 | m |
| Drain-source on-state resistance | RDS(ON) | VGS=10V,ID=12A | - | 8.0 | 10.0 | m |
| Gate threshold voltage | VGS(th) | VDS=VGS,ID=-250A | 1 | 1.8 | 3 | V |
| Forward transconductance | Gfs | VDS=15V,ID=6A | - | 12 | - | S |
| Zero gate voltage drain current | IDSS | VDS=25V,VGS=0V | - | - | 1 | A |
| Gate-source forward leakage | IGSS | VGS=+20V,VDS=0V | - | - | +100 | nA |
| Total gate charge | Qg | ID=35A,VDS=15V,VGS=10V | - | 10 | - | nC |
| Gate-source charge | Qgs | - | 3.5 | - | nC | |
| Gate-drain (miller)charge | Qgd | - | 3 | - | nC | |
| Turn-on delay time | td(off) | VDD=15V,ID=1A,RG=6,RL=15,VGEN=10V | - | 12 | - | ns |
| Rise time | tr | - | 4 | - | ns | |
| Turn-off delay time | td(off) | - | 32 | - | ns | |
| Fall time | tf | - | 6 | - | ns | |
| Input capacitance | Ciss | VGS=0V,VDS=15V,f=1.0MHz | - | 1300 | - | pF |
| Output capacitance | Coss | - | 270 | - | pF | |
| Reverse transfer capacitance | Crss | - | 145 | - | pF | |
| Diode forward voltage | VSD | IS=10A,VGS=0V | - | 0.87 | 1.5 | V |
| Max.diode forward current | IS | - | - | 12 | A | |
| Drain-source voltage | VDS | - | - | 30 | V | |
| Gate-source voltage | VGS | - | - | +20 | V | |
| Continuous drain current | ID | - | - | 12 | A | |
| Pulsed drain current | IDM | - | - | 48 | A | |
| Maximum power dissipation (TA=25C) | PD | - | - | 3.1 | W | |
| Maximum power dissipation (TA=75C) | PD | - | - | 2.0 | W | |
| Operating junction and storage temperature range | TJ/TSTG | -55 | - | 150 | C | |
| Junction-to-case thermal resistance | RJC | - | 40.3 | - | C/W | |
| Junction-to ambient thermal resistance (PCB mount) | RJA | - | 59 | - | C/W |
2411121112_KIA-Semicon-Tech-KNE6303A_C455978.pdf
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